Silicon Carbide Power MOSFET LGE LGE3M14120Q Designed for Solar Power Optimizers and EV Motor Drives
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Product Description
Product Overview
The LGE3M14120Q is a high-performance Silicon Carbide Power MOSFET designed for demanding applications. It offers high-speed switching, very low switching losses, and high blocking voltage with low on-resistance. This device is ideal for improving system efficiency, reducing cooling requirements, and enabling increased power density and system switching frequency in applications such as EV motor drives, PV string inverters, solar power optimizers, and switch mode power supplies.
Product Attributes
- Brand: LGE
- Material: Silicon Carbide
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Part Number | Package | VDS,max (V) | ID@25 (A) | RDS(ON) (m) | VGS,max (V) | TJ,max (C) |
| LGE3M14120Q | TO-247-4 | 1200 | 152 | 14 (typ. @ VGS=18V, ID=100A, TJ=175C) | -8 /+22 | 175 |
| Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
| V(BR)DSS | 1200 | - | - | V | VGS = 0V, ID = 100A |
| VGS(th) | 2.3 | 2.8 | 4 | V | VDS = VGS, ID = 28mA |
| IDSS | - | 1 | 100 | A | VDS = 1200V, VGS = 0V |
| IGSS | - | - | 100 | nA | VGS = 18V, VDS = 0V |
| RDS(on) | - | 14 | 18 | m | VGS = 18V, ID = 100A |
| RDS(on) | - | 27 | - | m | VGS = 18V, ID = 100A, TJ=175C |
| gfs | - | 71 | - | S | VDS = 20V, ID = 100A |
| Ciss | - | 5469 | - | pF | VDS = 1000V, VGS = 0V, TJ = 25C, f=100KHz |
| Coss | - | 235 | - | pF | VDS = 1000V, VGS = 0V, TJ = 25C, f=100KHz |
| Crss | - | 17.5 | - | pF | VDS = 1000V, VGS = 0V, TJ = 25C, f=100KHz |
| Eon | - | 812 | - | J | VDS = 800V, VGS = -4/+18V, ID = 100A, Rg = 2.5, L = 120uH |
| Eoff | - | 383 | - | J | VDS = 800V, VGS = -4/+18V, ID = 100A, Rg = 2.5, L = 120uH |
| td(on) | - | 19 | - | ns | VDS = 800V, VGS = -4/+18V, ID = 100A, Rg = 2.5, L = 120uH |
| tr | - | 29 | - | ns | VDS = 800V, VGS = -4/+18V, ID = 100A, Rg = 2.5, L = 120uH |
| td(off) | - | 42 | - | ns | VDS = 800V, VGS = -4/+18V, ID = 100A, Rg = 2.5, L = 120uH |
| tf | - | 9.3 | - | ns | VDS = 800V, VGS = -4/+18V, ID = 100A, Rg = 2.5, L = 120uH |
| VSD | - | 4.0 | - | V | VGS = -4V, ISD = 50A |
| VSD | - | 3.5 | - | V | VGS = -4V, ISD = 50A, TJ=175C |
| IS | - | 152 | - | A | VGS = -4V, Tc = 25C |
| trr | - | 66 | - | nS | VR = 800V, VGS = -4V, ID = 100A, di/dt = 3000A/S, TJ = 175C |
| Qrr | - | 1830 | - | nC | VR = 800V, VGS = -4V, ID = 100A, di/dt = 3000A/S, TJ = 175C |
| Irrm | - | 52 | - | A | VR = 800V, VGS = -4V, ID = 100A, di/dt = 3000A/S, TJ = 175C |
| Qgs | - | 54 | - | nC | VDS = 800V, VGS =-4/+18V, ID = 100A |
| Qgd | - | 45 | - | nC | VDS = 800V, VGS =-4/+18V, ID = 100A |
| Qg | - | 230 | - | nC | VDS = 800V, VGS =-4/+18V, ID = 100A |
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