Line frequency Thyristor module Littelfuse IXYS MCC21-14IO8B with RoHS compliance and TO-240AA package

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Product Description

Product Overview

The MCC21-14io8B is a phase leg Thyristor module designed for line frequency applications. It features a planar passivated chip, long-term stability, and a Direct Copper Bonded Al2O3-ceramic package with a DCB ceramic base plate for reduced weight and advanced power cycling. Suitable for applications like line rectifying, softstart AC motor control, DC motor control, power converters, AC power control, and lighting/temperature control.

Product Attributes

Brand: IXYS
Backside: Isolated
Package: TO-240AA
RoHS compliant
Soldering pins for PCB mounting
Isolation Voltage: 4800 V~

Technical Specifications

Symbol	Definition	Conditions	Unit	min.	typ.	max.
It	value for fusing	t = 10 ms; (50 Hz), sine	As			1400
It	value for fusing	t = 8,3 ms; (60 Hz), sine	As			1300
It	value for fusing	t = 10 ms; (50 Hz), sine	As			1400
It	value for fusing	t = 8,3 ms; (60 Hz), sine	As			1300
It	value for fusing	t = 10 ms; (50 Hz), sine	As			1400
It	value for fusing	t = 8,3 ms; (60 Hz), sine	As			1300
It	value for fusing	t = 10 ms; (50 Hz), sine	As			1400
It	value for fusing	t = 8,3 ms; (60 Hz), sine	As			1300
RRM/DRM	max. repetitive reverse/forward blocking voltage		V			1400
RSM/DSM	max. non-repetitive reverse/forward blocking voltage		V			1500
T(RMS)	RMS current	180 sine	A			21
TAV	average forward current	180 sine	A			13.5
(di/dt)cr	critical rate of rise of current	repetitive, I = TVJ = 125C; f = 50 Hz	A/s		150
VGT	gate trigger voltage	V = 6 V	V		0.85	1.52
IGT	gate trigger current	V = 6 V	mA		0.2	0.5
VGD	gate non-trigger voltage	V = VDRM	V		0.2
IGD	gate non-trigger current	V = VDRM	mA		5
IL	latching current		mA		100
IH	holding current		mA		100
tgd	gate controlled delay time	I = 21 A; G = 0.3 di /dt	s		2
tq	turn-off time	I = 21 A; V = VDRM; T = 150C	s		150
RthJC	thermal resistance junction to case		K/W		1.1
RthCH	thermal resistance case to heatsink		K/W		0.2
TVJ	virtual junction temperature		C	-40		125
Tstg	storage temperature		C	-40		125
VT0	threshold voltage		V		0.85
rT	slope resistance for power loss calculation only		m		15
Ptot	total power dissipation		W		45	90
PGM	max. gate power dissipation	t = 30 s	W		10
PGAV	average gate power dissipation		W		0.5
CJ	junction capacitance	VR = 400 V; f = 1 MHz	pF		22
ITSM	max. forward surge current	t = 10 ms; (50 Hz), sine	A			1400
(dv/dt)cr	critical rate of rise of voltage	T = 125C; method 1 (linear voltage rise)	V/s		500
VDRM	max. repetitive forward blocking voltage		V			1400
VRRM	max. repetitive reverse blocking voltage		V			1400
DRM	max. forward blocking voltage		V			1400
VRM	max. reverse blocking voltage		V			1400
R/D	reverse current, drain current		mA			1
M	mounting torque		Nm			4
M	terminal torque		Nm			2.5
dSpp/App	creepage distance on surface		mm		16.0
dSpb/Apb	striking distance through air		mm		16.0
ISOL	isolation voltage	t = 1 second	V~		4000
ISOL	isolation voltage	t = 1 minute	V~		4800
Weight			g			81