Switching and amplification transistor LRC LBC817-40LT1G NPN silicon type for electronic applications

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Product Description

Product Overview

The LBC817 series are general purpose NPN silicon transistors designed for various electronic applications. They offer reliable performance with a range of electrical characteristics suitable for switching and amplification tasks.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: NPN Silicon
Certifications: RoHS compliant

Technical Specifications

Characteristic	Symbol	LBC817-16	LBC817-25	LBC817-40	Unit	Notes
CollectorEmitter Voltage	V CEO	45	45	45	V
CollectorBase Voltage	V CBO	50	50	50	V
EmitterBase Voltage	V EBO	5.0	5.0	5.0	V
Collector Current Continuous	I C	500	500	500	mAdc
Total Device Dissipation (FR5 Board)	P D	225	225	225	mW	TA = 25C, Derate above 25C 1.8 mW/C
Thermal Resistance, Junction to Ambient (FR5 Board)	R JA	556	556	556	C/W
Total Device Dissipation (Alumina Substrate)	P D	300	300	300	mW	TA = 25C, Derate above 25C 2.4 mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	R JA	417	417	417	C/W
Junction and Storage Temperature	T J , T stg	55 to +150	55 to +150	55 to +150	C
CollectorEmitter Breakdown Voltage	V (BR)CEO	45	45	45	V	IC = 10 mA
CollectorEmitter Breakdown Voltage	V (BR)CES	50	50	50	V	VEB = 0, IC = 10 A
EmitterBase Breakdown Voltage	V (BR)EBO	5.0	5.0	5.0	V	IE = 1.0 A
Collector Cutoff Current	I CBO	100	100	100	nA	VCB = 20 V
Collector Cutoff Current	I CBO	5.0	5.0	5.0	A	VCB = 20 V, TA = 150C
DC Current Gain	h FE	100250	160400	250600		IC = 100 mA, V CE = 1.0 V
CollectorEmitter Saturation Voltage	V CE(sat)				V	IC = 500 mA, IB = 50 mA, Max
BaseEmitter On Voltage	V BE(on)				V	IC = 500 mA, V CE = 1.0 V, Max
CurrentGain Bandwidth Product	f T	100	100	100	MHz	IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz
Output Capacitance	C obo	10	10	10	pF	VCB = 10 V, f = 1.0 MHz, Typ