Electronic Component LRC LMBT6427LT1G Silicon Darlington Transistor in SOT23 Package for Various Uses

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Product Description

Product Overview

The LMBT6427LT1G and S-LMBT6427LT1G are NPN Silicon Darlington Transistors from LESHAN RADIO COMPANY, LTD. Designed for various electronic applications, these transistors offer high current gain and are available in the SOT-23 (TO-236AB) package. The S- prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Package: SOT23 (TO236AB)
Material: Silicon
Certifications: AEC-Q101 Qualified (S- prefix models)
RoHS Compliance: Declared

Technical Specifications

Characteristic	Symbol	Value	Unit	Conditions
Maximum Ratings	V CEO	40	Vdc
	V CBO	40	Vdc
	V EBO	12	Vdc
	I C (Continuous)	500	mAdc
Thermal Characteristics (FR5 Board)	PD	225	mW	TA = 25C
Thermal Characteristics (FR5 Board)	RJA	556	C/W
Thermal Characteristics (Alumina Substrate)	PD	300	mW	TA = 25C
Thermal Characteristics (Alumina Substrate)	RJA	417	C/W
Junction and Storage Temperature	TJ , Tstg	55 to +150	C
Off Characteristics	V (BR)CEO	40	Vdc	I C = 10 mAdc, V BE = 0
	V (BR)CBO	40	Vdc	I C = 100 Adc, I E = 0
	V (BR)EBO	12	Vdc	I E = 10 Adc, I C = 0
Cutoff Currents	I CES	1.0	Adc	V CE = 25Vdc, I B = 0
	I CBO	50	nAdc	V CB = 30Vdc, I E = 0
	I EBO	50	nAdc	V EB = 10Vdc, I C= 0
DC Current Gain	hFE	10,000 - 100,000		I C = 10 mAdc, V CE = 5.0 Vdc
	hFE	20,000 - 200,000		I C = 100 mAdc, V CE = 5.0Vdc
	hFE	14,000 - 140,000		I C = 500 mAdc, V CE = 5.0Vdc
CollectorEmitter Saturation Voltage	VCE(sat)	1.2	Vdc	I C = 50 mAdc, I B = 0.5 mAdc
CollectorEmitter Saturation Voltage	VCE(sat)	1.5	Vdc	I C = 500 mAdc, I B = 0.5 mAdc
BaseEmitter Saturation Voltage	V BE(sat)	2.0	Vdc	I C = 500 mAdc, I B = 0.5 mAdc
BaseEmitter On Voltage	V BE(on)	1.75	Vdc	I C = 50 mAdc, V CE = 5.0Vdc
Capacitance	C obo	7.0	pF	V CB = 10 Vdc, I E = 0, f = 1.0 MHz
Capacitance	C ibo	15	pF	V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz
Current GainHigh Frequency	\|h fe \|	1.3		V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz
Noise Figure	NF	10	dB	V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 k, f = 1.0 kHz