Telephony and Communication Equipment PNP Silicon Transistor LRC LMBTA92LT1G High Voltage Performance

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. LMBTA92LT1G and LMBTA93LT1G are PNP Silicon High Voltage Transistors designed for telephony and professional communication equipment applications. They offer high voltage capabilities and are available with an "S-" prefix for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 Qualified and PPAP Capable.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Certifications: AEC-Q101 Qualified and PPAP Capable (with S- prefix)
RoHS Compliance: Declared

Technical Specifications

Characteristic	Symbol	LMBTA92	LMBTA93	Unit	Conditions
MAXIMUM RATINGS
CollectorEmitter Voltage	V CEO	300	200	Vdc
CollectorBase Voltage	V CBO	300	200	Vdc
EmitterBase Voltage	V EBO	5.0	5.0	Vdc
Collector Current Continuous	I C	500	500	mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation (FR 5 Board)	PD	225		mW	TA = 25C
Derate above 25C (FR 5 Board)		1.8		mW/C
Thermal Resistance, Junction to Ambient (FR 5 Board)	RJA	556		C/W
Total Device Dissipation (Alumina Substrate)	PD	300		mW	TA= 25C
Derate above 25C (Alumina Substrate)		2.4		mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	RJA	417		C/W
Junction and Storage Temperature	TJ , Tstg	55 to +150		C
ELECTRICAL CHARACTERISTICS
DC Current Gain	hFE	25 40	25 40		(I C =1.0mAdc, V CE = 10 Vdc) Both Types; (I C = 10 mAdc, V CE = 10Vdc) Both Types
DC Current Gain	hFE	25	25		(I C = 30mAdc, V CE =10 Vdc) LMBTA92; LMBTA93
CollectorEmitter Saturation Voltage	VCE(sat)	0.5		Vdc	(I C = 20mAdc, I B = 2.0 mAdc)
BaseEmitter Saturation Voltage	V BE(sat)	0.9		Vdc	(I C = 20mAdc, I B = 2.0 mAdc)
CurrentGain Bandwidth Product	f T	50	50	MHz	(I C = 10mAdc, V CE= 20Vdc, f = 100MHz)
Collector Base Capacitance	C cb	6.0	8.0	pF	(V CB = 20 Vdc, I E = 0, f = 1.0 MHz)
CollectorEmitter Breakdown Voltage	V(BR)CEO	300	200	Vdc	(IC = 1.0 mAdc, IB = 0)
CollectorEmitter Breakdown Voltage	V(BR)CBO	300	200	Vdc	(IC = 100 Adc, IE = 0)
EmitterBase Breakdown Voltage	V(BR)EBO	5.0		Vdc	(IE = 100 Adc, IC = 0)
Collector Cutoff Current	ICBO	0.1		Adc	( VCB = 200Vdc, IE = 0)
Collector Cutoff Current	ICBO	100		Adc	( VCB = 300Vdc, IE = 0)
Collector Cutoff Current	ICBO	100		Adc	( VCB = 300Vdc, IE = 0)
EmitterBase Cutoff Current	IEBO	0.05		Adc	( VEB = 6.0Vdc, IC = 0)
EmitterBase Cutoff Current	IEBO	0.05		Adc	( VEB = 5.0Vdc, IC = 0)