NPN Silicon Transistor LRC LBTN880DPTUG Featuring 16 Amp Peak Collector Current and RoHS Compliance

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Product Description

Product Overview

The LBTN880DPTUG and S-LBTN880DPTUG are NPN Silicon Power Transistors designed for surface mount applications. They feature lead formed for plastic sleeves and are RoHS compliant and Halogen Free. The 'S-' prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS requirements and Halogen Free
Certifications: AEC-Q101 qualified and PPAP capable (S- prefix only)
Device Marking: LBTN880DPTUG (N88), S-LBTN880DPTUG (N88)
Shipping: 2500/Tape&Reel

Technical Specifications

Parameter	Symbol	Limits	Unit	Notes
CollectorEmitter Voltage	VCEO	80	V
CollectorBase Voltage	VCBO	80	V
EmitterBase Voltage	VEBO	5	V
Collector Current(DC)	IC	8	A
Peak collector current(tp < 5 ms)	ICM	16	A
Total Power Dissipation	PD	1.75	W	@ TA = 25C, mounted on minimum pad sizes
Thermal Resistance, Junction-to-Ambient	RJA	71.4	C/W	Note 1
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55~+150
CollectorEmitter Breakdown Voltage (IC = 1 mA, IB = 0)	VBR(CEO)	80	V
CollectorBase Breakdown Voltage (IC = 100A, IE = 0)	VBR(CBO)	80	V
EmitterBase Breakdown Voltage (IE = 100A, IC = 0)	VBR(EBO)	5	V
CollectorBase Cutoff Current (VCB=80V,IE=0 )	ICBO	200	nA	Max.
EmitterBase CutOff Current (VEB=5V,IC=0)	IEBO	200	nA	Max.
Collector-Emitter Cutoff Current (VCE=80V,IB=0)	ICEO	1	A	Max.
DC Current Gain (VCE =1V,IC =2A)	HFE	60 - 200
DC Current Gain (VCE =1V,IC =4A)	HFE	40 -
CollectorEmitter Saturation Voltage (IC =8A,IB =400mA)	VCE(sat)	1.5	V	Max.
Base-Emitter saturation voltage (IC =8A, IB =800 mA)	VBE(sat)	-	V
Delay Time	td	46.5	ns	Pulse Test
Rise Time	tr	83	ns	Pulse Test
Storage Time	ts	1573	ns	Pulse Test
Fall Time	tf	112	ns	Pulse Test