N Channel Enhancement Mode Power MOSFET Littelfuse IXTP34N65X2 Avalanche Rated X2 Class Device
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Product Description
IXTP34N65X2 / IXTH34N65X2 N-Channel Enhancement Mode Power MOSFET
This X2-Class Power MOSFET series, featuring the IXTP34N65X2 and IXTH34N65X2 models, offers international standard packages with low RDS(ON) and low gate charge (QG). Designed for high power density, these devices are avalanche rated and boast low package inductance, making them easy to mount and space-saving. They are ideal for applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.
Product Attributes
- Brand: IXYS (Littelfuse)
- Product Type: N-Channel Enhancement Mode, Avalanche Rated X2-Class Power MOSFET
- Package Types: TO-220 (IXTP), TO-247 (IXTH)
- Certifications: Covered by one or more U.S. patents (listed in source)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Test Conditions | Characteristic Values (TJ = 25C, Unless Otherwise Specified) | Min. | Typ. | Max. | Units |
| BVDSS | VGS = 0V, ID = 1mA | 650 | V | |||
| TJ = 25C to 150C | 650 | V | ||||
| VGS(th) | VDS = VGS, ID = 250A | 3.0 | 5.0 | V | ||
| IGSS | VGS = 30V, VDS = 0V | 100 | nA | |||
| IDSS | VDS = VDSS, VGS = 0V | 10 | A | |||
| TJ = 125C | 150 | A | ||||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 96 | m | |||
| VDGR | TJ = 25C to 150C, RGS = 1M | 650 | V | |||
| VGSS Continuous | 30 | V | ||||
| VGSM Transient | 40 | V | ||||
| ID25 | TC = 25C | 34 | A | |||
| IDM | TC = 25C, Pulse Width Limited by TJM | 68 | A | |||
| IA | TC = 25C | 17 | A | |||
| EAS | TC = 25C | 1 | J | |||
| dv/dt | IS IDM, VDD VDSS, TJ 150C | 15 | V/ns | |||
| PD | TC = 25C | 540 | W | |||
| TJ | -55 | +150 | C | |||
| TJM | 150 | C | ||||
| Tstg | -55 | +150 | C | |||
| TL | Maximum Lead Temperature for Soldering | 300 | C | |||
| TSOLD | 1.6 mm (0.062in.) from Case for 10s | 260 | C | |||
| Md | Mounting Torque | 1.13 | Nm/lb.in | |||
| Weight | TO-220 | 3 | g | |||
| Weight | TO-247 | 6 | g | |||
| IS | VGS = 0V | 34 | A | |||
| ISM | Repetitive, pulse Width Limited by TJM | 136 | A | |||
| VSD | IF = IS, VGS = 0V, Note 1 | 1.4 | V | |||
| trr | IF = 17A, -di/dt = 100A/s, VR = 100V | 390 | ns | |||
| QRM | 4.2 | C | ||||
| IRM | 21.8 | A | ||||
| gfs | VDS = 10V, ID = 0.5 ID25, Note 1 | 20 | 33 | S | ||
| RGi | 0.90 | |||||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 3000 | pF | |||
| Coss | 2180 | pF | ||||
| Crss | 1.7 | pF | ||||
| Co(er) | VGS = 0V, VDS = 0.8 VDSS | 125 | pF | |||
| Co(tr) | 490 | pF | ||||
| td(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 10 (External) | 30 | ns | |||
| tr | 48 | ns | ||||
| td(off) | 68 | ns | ||||
| tf | 30 | ns | ||||
| Qg(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 54 | nC | |||
| Qgs | 15 | nC | ||||
| Qgd | 20 | nC | ||||
| RthJC | 0.23 | C/W | ||||
| RthCS | TO-220 | 0.50 | C/W | |||
| RthCS | TO-247 | 0.21 | C/W |
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