High Voltage Logic Level IGBT Littelfuse NGB8202ANT4G with Monolithic Circuitry and Gate Emitter ESD Protection
Product Overview
The NGB8202AN is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition systems, particularly in Coil-on-Plug and Driver-on-Coil applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection, making it suitable for inductive coil driver applications requiring high voltage and high current switching. This device offers gate-emitter ESD protection, temperature-compensated gate-collector voltage clamp limits stress applied to the load, and an integrated ESD diode. Its low threshold voltage allows for interfacing power loads to logic or microprocessor devices, and it boasts low saturation voltage and high pulsed current capability. This is a Pb-Free device.
Product Attributes
- Brand: Littelfuse
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-Free
Technical Specifications
| Rating | Symbol | Value | Unit | Conditions |
| Collector-Emitter Voltage | VCES | 440 | V | |
| Collector-Gate Voltage | VCER | 440 | V | |
| Gate-Emitter Voltage | VGE | ±15 | V | |
| Collector Current-Continuous @ TC = 25°C | IC | 20 | ADC | |
| Collector Current-Pulsed | IC | 50 | AAC | |
| Continuous Gate Current | IG | 1.0 | mA | |
| Transient Gate Current | IG | 20 | mA | (t ≤ 2 ms, f ≤ 100 Hz) |
| ESD (Charged-Device Model) | ESD | 2.0 | kV | |
| ESD (Human Body Model) | ESD | 8.0 | kV | (R = 1500 Ω, C = 100 pF) |
| ESD (Machine Model) | ESD | 500 | V | (R = 0 Ω, C = 200 pF) |
| Total Power Dissipation @ TC = 25°C | PD | 150 | Watts | |
| Derate above 25°C | 1.0 | W/°C | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C | |
| Thermal Resistance, Junction to Case | RθJC | 1.0 | °C/W | |
| Thermal Resistance, Junction to Ambient (Note 1) | RθJA | 62.5 | °C/W | (1. When surface mounted to an FR4 board using the minimum recommended pad size.) |
| Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds | TL | 275 | °C | |
| Single Pulse Collector-to-Emitter Avalanche Energy | EAS | 250 | mJ | (VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 25°C) |
| Reverse Avalanche Energy | EAS(R) | 2000 | mJ | (VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C) |
| Collector-Emitter Clamp Voltage | BVCES | 370-440 | V | (IC = 2.0 mA, TJ = -40°C to 175°C) |
| Zero Gate Voltage Collector Current | ICES | 0.1-1.0 | µA | (VGE = 0 V, VCE = 15 V, TJ = 25°C) |
| Reverse Collector-Emitter Clamp Voltage | BVCES(R) | 30-39 | V | (IC = -75 mA, TJ = 25°C) |
| Reverse Collector-Emitter Leakage Current | ICES(R) | 0.05-0.2 | mA | (VCE = -24 V, TJ = 25°C) |
| Gate-Emitter Clamp Voltage | BVGES | 12-14 | V | (IG = ±5.0 mA, TJ = -40°C to 175°C) |
| Gate-Emitter Leakage Current | IGES | 200-350* | µA | (VGE = ±5.0 V, TJ = -40°C to 175°C) |
| Gate Resistor | RG | -70 | Ω | (TJ = -40°C to 175°C) |
| Gate Emitter Resistor | RGE | 14.25-25 | kΩ | (TJ = -40°C to 175°C) |
| Gate Threshold Voltage | VGE(th) | 1.5-2.1 | V | (IC = 1.0 mA, VGE = VCE, TJ = 25°C) |
| Collector-to-Emitter On-Voltage | VCE (on) | 0.85-1.35 | V | (IC = 6.5 A, VGE = 3.7 V, TJ = 25°C) |
| Forward Transconductance | gfs | 10-25 | Mhos | (VCE = 5.0 V, IC = 6.0 A, TJ = 25°C) |
| Input Capacitance | CISS | 1100-1500 | pF | (VCE = 25 V, f = 10 kHZ, TJ = 25°C) |
| Output Capacitance | COSS | 70-90 | pF | |
| Transfer Capacitance | CRSS | 18-22 | pF | |
| Turn-Off Delay Time (Resistive) | td (off) | 6.0-10 | µSec | (VCC = 300 V, IC = 9 A, RG = 1.0 kΩ, RL = 33 Ω, VGE = 5.0 V, TJ = 25°C) |
| Fall Time (Resistive) | tf | 4.0-8.0 | (TJ = 25°C) | |
| Turn-Off Delay Time (Inductive) | td (off) | 3.0-7.0 | µSec | (VCC = 300 V, IC = 9 A, RG = 1.0 kΩ, L = 300 µH, VGE = 5.0 V, TJ = 25°C) |
| Fall Time (Inductive) | tf | 1.5-4.5 | (TJ = 25°C) | |
| Turn-On Delay Time | td (on) | 1.0-2.0 | (VCC = 14 V, IC = 9.0 A, RG = 1.0 kΩ, RL = 1.5 Ω, VGE = 5.0 V, TJ = 25°C) | |
| Rise Time | tr | 4.0-8.0 | (TJ = 25°C) |
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