AEC Q101 Qualified PNP Medium Power Transistor S LBT P180Z4TZHG with Halogen Free Material Compliance
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The LBTP180Z4TZHG and S-LBTP180Z4TZHG are PNP medium power transistors designed for various applications. They feature high current and low voltage capabilities. The S-prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements. These devices comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Origin: China (implied by manufacturer)
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix only)
- Package: SOT223
Technical Specifications
| Parameter | Symbol | LBTP180Z4TZHG | S-LBTP180Z4TZHG | Unit | Min | Typ. | Max. |
| MAXIMUM RATINGS | |||||||
| CollectorBase Voltage | VCBO | -100 | -100 | V | |||
| CollectorEmitter Voltage | VCEO | -80 | -80 | V | |||
| EmitterBase Voltage | VEBO | -5 | -5 | V | |||
| Collector Current Continuous | IC | -1 | -1 | A | |||
| Peak Collector Current | ICM | -1.5 | -1.5 | A | |||
| Peak Base Current | IBM | -0.2 | -0.2 | A | |||
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | C | |||
| THERMAL CHARACTERISTICS | |||||||
| Total Device Dissipation, FR4 Board (Note 1) @ TA = 25C | PD | mW | 833 | ||||
| Thermal Resistance, JunctiontoAmbient (Note 1) | RJA | C/W | 150 | ||||
| ELECTRICAL CHARACTERISTICS | |||||||
| Collector Cutoff Current | ICBO | nA | -10 | -100 | |||
| (IE = 0, VCB = 30 V) | |||||||
| (IE = 0, VCB = 30 V, Tj = 125 C) | A | -10 | |||||
| Emitter CutOff Current | IEBO | nA | -100 | ||||
| (IC = 0, VEB = 5 V) | |||||||
| DC Current Gain | HFE | 40 | 250 | ||||
| (IC = -5mA, VCE = -2V) | 115 | ||||||
| (IC = -150mA, VCE = -2V) | |||||||
| (IC = -500mA, VCE = -2V) | |||||||
| CollectorEmitter Saturation Voltage | VCE(sat) | V | -0.5 | ||||
| (IC = 500 mA, IB = 50 mA) | |||||||
| BaseEmitter Voltage | VBE | V | |||||
| (IC = 500 mA, VCE = 2 V) | |||||||
| Transitional Frequency | fT | MHz | 100 | ||||
| (IC = 10 mA, VCE = 5 V, f = 100 MHz) | |||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -80 | -80 | V | |||
| CollectorBase Breakdown Voltage | VBR(CBO) | -100 | -100 | V | |||
| EmitterBase Breakdown Voltage | VBR(EBO) | -5 | -5 | V | |||
| (IE = 100 A, IC = 0) | |||||||
| Collector-Emitter cutoff Current | ICEO | A | -10 | ||||
| (VCE= -80V,IB=0) | |||||||
| BaseEmitter Saturation Voltage | VBE(sat) | V | -1 | ||||
| (IC = 500 mA, IB = 50 mA) | |||||||
| Output Capacitance | Cobo | pF | 85 | ||||
| (VCB=5V,IE=0,f=1.0MHz) | |||||||
| Input Capacitance | Cibo | pF | 13.5 | ||||
| (VEB=0.5V,IC=0,f=1.0MHz) | |||||||
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