VHF UHF NPN Silicon Transistor LRC LMBT918LT1G Suitable for High Frequency Electronic Applications

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Product Description

Product Overview

The LMBT918LT1G is a VHF/UHF NPN Silicon Transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications requiring high-frequency performance. It offers reliable operation within specified voltage and current limits, making it suitable for amplifier and signal processing circuits.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Device Marking: M3B
Package: SOT-23 (TO-236AB)
RoHS Compliance: Declared

Technical Specifications

Characteristic	Symbol	Min	Max	Unit	Conditions
MAXIMUM RATINGS	V CEO		15	Vdc
	V CBO		30	Vdc
	V EBO		3.0	Vdc
	I C (Continuous)		50	mAdc
THERMAL CHARACTERISTICS (FR-5 Board)	PD		225	mW	TA = 25C
THERMAL CHARACTERISTICS (FR-5 Board)	RJA		556	C/W
THERMAL CHARACTERISTICS (Alumina Substrate)	PD		300	mW	TA = 25C
THERMAL CHARACTERISTICS (Alumina Substrate)	RJA		417	C/W
JUNCTION AND STORAGE TEMPERATURE	TJ , Tstg	55	+150	C
OFF CHARACTERISTICS	V (BR)CEO	15		Vdc	I C = 3.0 mAdc, I B = 0
	V (BR)CBO	30		Vdc	I C = 1.0 Adc, I E = 0
	V (BR)EBO	3.0		Vdc	I E = 10 Adc, I C = 0
COLLECTOR CUTOFF CURRENT	I CBO		50	nAdc	V CB = 15 Vdc, I E = 0
ON CHARACTERISTICS	hFE	20			I C = 3.0 mAdc, V CE = 1.0 Vdc
	VCE(sat)		0.4	Vdc	I C = 10 mAdc, I B = 1.0 mAdc
	V BE(sat)		1.0	Vdc	I C = 10 mAdc, I B = 1.0 mAdc
SMALL-SIGNAL CHARACTERISTICS	f T	600		MHz	I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz
	C obo		3.0	pF	V CB = 0 Vdc, I E = 0, f = 1.0 MHz
	C obo		1.7	pF	V CB = 10 Vdc, I E = 0, f = 1.0 MHz
INPUT CAPACITANCE	C ibo		2.0	pF	V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz
NOISE FIGURE	NF		6.0	dB	I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 , f = 60 MHz
POWER OUTPUT	P out	30		mW	I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz
COMMON-EMITTER AMPLIFIER POWER GAIN	G pe	11		dB	I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz