LRC S LBC817 16LT1G NPN Silicon Transistor for Electronic Circuits Switching and Amplification Tasks

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Price: Negotiable

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Product Description

Product Overview

The LBC817 series are NPN silicon general-purpose transistors designed for various electronic applications. They offer a range of DC current gain and saturation voltage characteristics, making them suitable for switching and amplification tasks.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Certifications: AEC-Q101 Qualified (for S- prefix devices)
RoHS Compliance: Declared

Technical Specifications

Characteristic	Symbol	LBC817-16	LBC817-25	LBC817-40	Unit	Conditions
MAXIMUM RATINGS
CollectorEmitter Voltage	V CEO	45			V
CollectorBase Voltage	V CBO	50			V
EmitterBase Voltage	V EBO	5.0			V
Collector Current Continuous	I C	500			mAdc
Total Device Dissipation (FR5 Board)	P D	225			mW	TA = 25C, Derate above 25C: 1.8 mW/C
Total Device Dissipation (Alumina Substrate)	P D	300			mW	TA = 25C, Derate above 25C: 2.4 mW/C
Junction and Storage Temperature	T J , T stg	55 to +150			C
ELECTRICAL CHARACTERISTICS
CollectorEmitter Breakdown Voltage	V (BR)CEO	45			V	IC = 10 mA
CollectorEmitter Breakdown Voltage	V (BR)CES	50			V	VEB = 0, IC = 10 A
EmitterBase Breakdown Voltage	V (BR)EBO	5.0			V	IE = 1.0 A
Collector Cutoff Current	I CBO	100			nA	VCB = 20 V
Collector Cutoff Current	I CBO	5.0			A	VCB = 20 V, TA = 150C
DC Current Gain	h FE	100 250	160 400	250 600		IC = 100 mA, V CE = 1.0 V
DC Current Gain	h FE	40				IC = 500 mA, V CE = 1.0 V
CollectorEmitter Saturation Voltage	V CE(sat)	0.7			V	IC = 500 mA, IB = 50 mA
BaseEmitter On Voltage	V BE(on)	1.2			V	IC = 500 mA, V CE = 1.0 V
CurrentGain Bandwidth Product	f T	100			MHz	IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz
Output Capacitance	C obo	10			pF	VCB = 10 V, f = 1.0 MHz