High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC Q101 and PPAP capability

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Product Description

Product Overview

This document describes the LBSS5250Y3T1G and S-LBSS5250Y3T1G medium power PNP transistors. These transistors offer low saturation voltage and high-speed switching capabilities. The S-prefix variant is qualified for automotive applications, meeting AEC-Q101 standards and PPAP capability. The materials comply with RoHS requirements and are Halogen Free. Primarily used as drivers, these transistors are suitable for various applications requiring efficient switching.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS, Halogen Free
Certifications: AEC-Q101 qualified (S-prefix only), PPAP capable (S-prefix only)

Technical Specifications

Parameter	Symbol	LBSS5250Y3T1G / S-LBSS5250Y3T1G	Unit	Conditions
CollectorBase Voltage	VCBO	-50	V
CollectorEmitter Voltage	VCEO	-50	V
EmitterBase Voltage	VEBO	-6	V
Collector Current	IC	-2	A
Collector Current (Pulse)	ICP	-4	A
Total Device Dissipation (FR-4 Board)	PD	550	mW	@ TA = 25C
Derate above 25C		225	mW/C
Thermal Resistance, JunctiontoAmbient	RJA	4.4	C/W
Junction and Storage Temperature	TJ,Tstg	-55 ~ +150	C
Collector-emitter breakdown voltage	BVCEO	-50	V	(IC = -1mA)
Collector-base breakdown voltage	BVCBO	-50	V	(IC = -100A)
Emitter-base breakdown voltage	BVEBO	-6	V	(IE = -100A)
Collector Cutoff Current	ICBO	-1	A	(VCB = -50V, IE = 0)
Emitter Cut-off Current	IEBO	-1	A	(VEB =-4V, IC =0)
DC Current Gain	HFE	180 - 450		(VCE = -2V, IC = -50mA)
CollectorEmitter Saturation Voltage	VCE(sat)	-200 ~ -400	mV	(IC = -700mA, IB = -35mA)
Transition Frequency	fT	320	MHz	(VCE =-10V, IE =300mA, f=100MHz)
Collector Output Capacitance	Cob	22	pF	(VCB =-10V, IE =0A, f=1MHz)