Silicon NPN Transistor LRC LBC846AWT1G General Purpose Electronic Component for Circuit Applications

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Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. BC846, BC847, and BC848 series are general-purpose NPN silicon transistors designed for a wide range of applications. These devices offer reliable performance with various electrical characteristics optimized for different models within the series.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Certifications: AEC-Q101 Qualified (for 'S-' prefix devices)
Compliance: RoHS compliant

Technical Specifications

Characteristic	Symbol	BC846	BC847	BC848	Unit	Conditions
MAXIMUM RATINGS
CollectorEmitter Voltage	V CEO	65	45	30	V
CollectorBase Voltage	V CBO	80	50	30	V
EmitterBase Voltage	V EBO	6.0	6.0	5.0	V
Collector Current Continuous	I C	100	100	100	mAdc
Total Device Dissipation	P D	150			mW
Thermal Resistance, Junction to Ambient	R JA	833			C/W
Junction and Storage Temperature	T J , T stg	55 to +150			C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage	V (BR)CEO	65	45	30	V	(IC = 10 mA)
CollectorBase Breakdown Voltage	V (BR)CBO	80	50	30	V	(IC = 10 A)
EmitterBase Breakdown Voltage	V (BR)EBO	6.0	6.0	5.0	V	(IE = 1.0 A)
Collector Cutoff Current	I CBO	15			nA	(VCB = 30 V)
Collector Cutoff Current	I CBO	5.0			A	(VCB = 30 V, TA = 150C)
ON CHARACTERISTICS
DC Current Gain	hFE	110180	220290	420520		(IC = 2.0 mA, V CE = 5.0 V)
DC Current Gain	hFE	200450	450800			(IC = 2.0 mA, V CE = 5.0 V)
CollectorEmitter Saturation Voltage	V CE(sat)	0.25			V	(IC = 10 mA, IB = 0.5 mA)
CollectorEmitter Saturation Voltage	V CE(sat)	0.6			V	(IC = 100 mA, IB = 5.0 mA)
BaseEmitter Saturation Voltage	V BE(sat)	0.7			V	(IC = 10 mA, IB = 0.5 mA)
BaseEmitter Saturation Voltage	V BE(sat)	0.9			V	(IC = 100 mA, IB = 5.0 mA)
BaseEmitter Voltage	V BE(on)	580660	660700		mV	(IC = 2.0 mA, V CE = 5.0 V)
BaseEmitter Voltage	V BE(on)	770			mV	(IC = 10 mA, V CE = 5.0 V)
SMALL-SIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product	f T	100			MHz	(IC = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance	Cobo	4.5			pF	(V CB = 10 V, f = 1.0 MHz)
Noise Figure	NF	10			dB	(IC = 0.2 mA, V CE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
Noise Figure	NF	4.0			dB	(IC = 0.2 mA, V CE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)