Surface Mount Thyristor Littelfuse MCR12DSNT4G for Capacitive Discharge Ignition and Process Control

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Product Description

Product Overview

The MCR12DSM and MCR12DSN are surface mount thyristors designed for high volume, low cost, industrial and consumer applications. They feature a passivated die surface for reliability, low level triggering and holding characteristics, and are UL recognized with a V-0 flammability rating. These devices are suitable for applications such as motor control, process control, temperature, light and speed control, CDI (Capacitive Discharge Ignition), and small engines.

Product Attributes

Brand: Littelfuse
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: UL Recognized (V-0 flammability rating)
ESD Ratings: Human Body Model, 3B > 8000V; Machine Model, C > 400V

Technical Specifications

Rating	Symbol	MCR12DSM	MCR12DSN	Unit	Notes
Peak Repetitive OffState Voltage	VDRM / VRRM	600	800	V	(TC = 40 to +110C, Sine Wave, 50 to 60 Hz, RGK = 1 k )
OnState RMS Current	IT(RMS)	12		A	(180 Conduction Angles; TC = 75C)
Average On-State Current	IT (AV)	7.6		A	(180 Conduction Angles; TC = 75C)
Non-Repetitive Surge Current	ITSM	100		A	(1/2 Cycle, Sine Wave 60 Hz, TJ = 110C)
Circuit Fusing Consideration	I2t	41		As	(t = 8.3 ms)
Forward Peak Gate Power	PGM	5.0		W	(Pulse Width 1.0 sec, TC= 75C)
Forward Average Gate Power	PG (AV)	0.5		W	(t = 8.3 ms, TC = 75C)
Forward Peak Gate Current	IGM	2.0		A	(Pulse Width 1.0 sec, TC= 75C)
Operating Junction Temperature Range	TJ	-40 to +110		C
Storage Temperature Range	Tstg	-40 to +150		C
Thermal Resistance, JunctiontoCase	RJC	2.2		C/W
Thermal Resistance, JunctiontoAmbient	RJA	88		C/W
Thermal Resistance, JunctiontoAmbient	RJA	80		C/W	(Note 2)
Maximum Lead Temperature for Soldering Purposes	TL	260		C	(Note 3)
Peak Repetitive Forward or Reverse Blocking Current	IDRM / IRRM	-	10 / 500	A	TJ = 25C / 110C
Peak Reverse Gate Blocking Voltage	VGRM	10 - 18		V	(IGR = 10 A)
Peak Reverse Gate Blocking Current	IGRM	_ _ 1.2		A	(VGR = 10 V)
Peak Forward OnState Voltage	VTM	1.3 - 1.9		V	(Note 5), (ITM = 20 A)
Gate Trigger Voltage (Pulse)	IGT	5.0 - 200 / 300		A	TJ = 25C / 40C (Note 6)
Gate Trigger Voltage (Continuous dc)	VGT	0.45 - 1.0 / 1.5		V	TJ = 25C / 40C (Note 6)
Holding Current	IH	0.5 - 6.0 / 10		mA	TJ = 25C / 40C
Latching Current	IL	0.5 - 6.0 / 10		mA	TJ = 25C / 40C
Turn-On Time	tgt	_ 2.0 - 5.0		s
Critical Rate of Rise of OffState Voltage	dv/dt	2.0 - 10		V/s	(Note 4)
Critical Rate of Rise of OnState Current	di/dt	50 - 100		A/s