General purpose amplifier transistor LRC LMBT2222AWT1G NPN silicon device with surface mount package

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Product Description

Product Overview

The LMBT2222AWT1G is a general-purpose NPN silicon transistor designed for amplifier applications. It is housed in a low-power surface-mount SOT323/SC70 package.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Certifications: AEC-Q101 Qualified, PPAP Capable
RoHS Compliance: Declared
Prefix for Automotive Applications: S-

Technical Specifications

Part Number	CollectorEmitter Voltage (V CEO)	CollectorBase Voltage (V CBO)	EmitterBase Voltage (V EBO)	Collector Current (I C)	Total Device Dissipation (PD)	Thermal Resistance (RJA)	DC Current Gain (hFE)	CollectorEmitter Saturation Voltage (VCE(sat))	BaseEmitter Saturation Voltage (V BE(sat))	CurrentGain Bandwidth Product (f T)	Output Capacitance (C obo)	Input Capacitance (C ibo)	Input Impedance (h ie)	Voltage Feedback Ratio (h re)	SmallSignal Current Gain (h fe)	Output Admittance (h oe)	Noise Figure (NF)	Delay Time (t d)	Rise Time (t r)	Storage Time (t s)	Fall Time (t f)
LMBT2222AWT1G	40 Vdc	75 Vdc	6.0 Vdc	600 mAdc	150 mW (TA = 25C)	833 C/W	35100 (IC=0.1150mAdc, VCE=10Vdc) 40 (IC=500mAdc, VCE=10Vdc)	0.3 Vdc (IC=150mAdc, IB=15mAdc) 1.0 Vdc (IC=500mAdc, IB=50mAdc)	0.61.2 Vdc (IC=150mAdc, IB=15mAdc) 2.0 Vdc (IC=500mAdc, IB=50mAdc)	300 MHz (IC=20mAdc, VCE=20Vdc, f=100MHz)	8.0 pF (VCB=10Vdc, IE=0, f=1.0MHz)	30 pF (VEB=0.5Vdc, IC=0, f=1.0MHz)	0.251.25 k (VCE=10Vdc, IC=10mAdc, f=1.0kHz)	4.0 X 10 4 (VCE=10Vdc, IC=10mAdc, f=1.0kHz)	75375 (VCE=10Vdc, IC=10mAdc, f=1.0kHz)	25200 mhos (VCE=10Vdc, IC=10mAdc, f=1.0kHz)	4.0 dB (VCE=10Vdc, IC=100Adc, RS=1.0k, f=1.0kHz)	10 ns (VCC=3.0Vdc, VBE=0.5Vdc, IC=150mAdc, IB1=15mAdc)	25 ns (VCC=3.0Vdc, VBE=0.5Vdc, IC=150mAdc, IB1=15mAdc)	225 ns (VCC=30Vdc, IC=150mAdc, IB1=15mAdc, IB2=15mAdc)	60 ns (VCC=30Vdc, IC=150mAdc, IB1=15mAdc, IB2=15mAdc)