Silicon NPN Transistor S LMBT3906LT1G AEC Q101 Certified RoHS Compliant Halogen Free Electronic Part
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The LMBT3906LT1G and S-LMBT3906LT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix)
- Device Marking: LMBT3906LT1G (2A), S-LMBT3906LT1G (2A)
Technical Specifications
| Parameter | Symbol | LMBT3906LT1G | S-LMBT3906LT1G | Unit | Notes | |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | VCEO | -40 | -40 | Vdc | ||
| CollectorBase Voltage | VCBO | -40 | -40 | Vdc | ||
| EmitterBase Voltage | VEBO | -5 | -5 | Vdc | ||
| Collector Current Continuous | IC | -200 | -200 | mAdc | ||
| Total Device Dissipation, FR5 Board | PD | 225 | 225 | mW | @ TA = 25C | |
| Derate above 25C | 1.8 | 1.8 | mW/C | |||
| Thermal Resistance, JunctiontoAmbient | RJA | 556 | 556 | C/W | ||
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | C | ||
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -40 | -40 | V | (IC = -1.0 mAdc, IB = 0) | |
| CollectorBase Breakdown Voltage | VBR(CBO) | -40 | -40 | V | (IC = -10 Adc, IE = 0) | |
| EmitterBase Breakdown Voltage | VBR(EBO) | -5 | -5 | V | (IE = -10 Adc, IC = 0) | |
| Collector Cutoff Current | ICEX | nA | ( VCE = -30 Vdc, VEB = -3.0Vdc) | |||
| Base Cutoff Current | IBL | nA | (VCE = -30 Vdc, VEB = -3.0Vdc) | |||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | HFE | 60 - 300 | 60 - 300 | (IC = -0.1 mAdc, VCE = -1.0 Vdc) | ||
| 60 - 100 | 60 - 100 | (IC = -1.0 mAdc, VCE = -1.0 Vdc) | ||||
| 30 - 60 | 30 - 60 | (IC = -10 mAdc, VCE = -1.0 Vdc) | ||||
| (IC = -50 mAdc, VCE = -1.0 Vdc) | ||||||
| (IC = -100 mAdc, VCE = -1.0 Vdc) | ||||||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.25 (Typ) | -0.25 (Typ) | V | (IC = -10 mAdc, IB = -1.0 mAdc) | |
| -0.4 (Typ) | -0.4 (Typ) | V | (IC = -50 mAdc, IB = -5.0 mAdc) | |||
| BaseEmitter Saturation Voltage | VBE(sat) | -0.65 (Typ) | -0.65 (Typ) | V | (IC = -10 mAdc, IB = -1.0 mAdc) | |
| -0.85 (Typ) | -0.85 (Typ) | V | (IC = -50 mAdc, IB = -5.0 mAdc) | |||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | fT | 250 | 250 | MHz | (IC = -10mAdc, VCE= -20Vdc, f = 100MHz) | |
| Output Capacitance | Cobo | 4.5 (Typ) | 4.5 (Typ) | pF | (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) | |
| Input Capacitance | Cibo | 10 (Typ) | 10 (Typ) | pF | (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) | |
| SWITCHING CHARACTERISTICS | ||||||
| Delay Time | td | 35 (Typ) | 35 (Typ) | ns | (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) | |
| Rise Time | tr | 35 (Typ) | 35 (Typ) | ns | (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) | |
| Storage Time | ts | 225 (Typ) | 225 (Typ) | ns | (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) | |
| Fall Time | tf | 75 (Typ) | 75 (Typ) | ns | (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) | |
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