Durable High Voltage IGBT Device Littelfuse IXYH25N250CHV Suitable for UPS and Resonant Mode Circuits
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Product Description
IXYT25N250CHV / IXYH25N250CHV High Voltage XPTTM IGBT
The IXYT25N250CHV and IXYH25N250CHV are high voltage XPTTM IGBTs designed for high power density applications. They offer high blocking voltage, high peak current capability, and low saturation voltage, with advantages such as low gate drive requirement. These IGBTs are suitable for switch-mode and resonant-mode power supplies, uninterruptible power supplies (UPS), laser generators, capacitor discharge circuits, and AC switches.
Product Attributes
- Brand: IXYS
- Technology: XPTTM IGBT
- Package Options: TO-268HV (IXYT), TO-247HV (IXYH)
- Origin: USA (implied by patent information)
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Units | IXYT25N250CHV / IXYH25N250CHV |
|---|---|---|---|---|---|---|
| BVCES | IC = 250A, VGE = 0V | 2500 | V | |||
| VGE(th) | IC = 250A, VCE = VGE | 3.0 | 5.0 | V | ||
| ICES | VCE = VCES, VGE = 0V | 25 | A | |||
| TJ = 100C | 100 | A | ||||
| IGES | VCE = 0V, VGE = 20V | 100 | nA | |||
| VCE(sat) | IC = 25A, VGE = 15V, Note 1 | 3.4 | 4.0 | V | ||
| TJ = 150C | 4.7 | V | ||||
| gfs | IC = 25A, VCE = 10V, Note 1 | 16 | 27 | S | ||
| RGi | 2.8 | |||||
| Cies | VCE = 25V, VGE = 0V, f = 1MHz | 3060 | pF | |||
| Coes | VCE = 25V, VGE = 0V, f = 1MHz | 114 | pF | |||
| Cres | VCE = 25V, VGE = 0V, f = 1MHz | 43 | pF | |||
| Qg(on) | IC = 25A, VGE = 15V, VCE = 0.5 VCES | 147 | nC | |||
| Qge | IC = 25A, VGE = 15V, VCE = 0.5 VCES | 16 | nC | |||
| Qgc | IC = 25A, VGE = 15V, VCE = 0.5 VCES | 68 | nC | |||
| td(on) | Inductive load, TJ = 150C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 15 | ns | |||
| Inductive load, TJ = 25C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 18 | ns | ||||
| tri | Inductive load, TJ = 150C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 34 | ns | |||
| Inductive load, TJ = 25C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 33 | ns | ||||
| Eon | Inductive load, TJ = 150C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 8.3 | mJ | |||
| Inductive load, TJ = 25C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 11.0 | mJ | ||||
| td(off) | Inductive load, TJ = 150C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 230 | ns | |||
| Inductive load, TJ = 25C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 225 | ns | ||||
| tfi | Inductive load, TJ = 150C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 246 | ns | |||
| Inductive load, TJ = 25C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 350 | ns | ||||
| Eoff | Inductive load, TJ = 150C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 7.3 | mJ | |||
| Inductive load, TJ = 25C, IC = 50A, VGE = 15V, VCE = 0.5 VCES, RG = 5, Note 2 | 10.5 | mJ | ||||
| RthJC | 0.16 | C/W | ||||
| RthCS | 0.15 | C/W |
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Note 2: Inductive load, TJ = 150C, IC = 25A, VGE = 15V, VCE = 0.5 VCES, RG = 5.
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