Littelfuse IXYS DPG80C400HB Fast Recovery Diode with Common Cathode and RoHS Compliant TO247 Package
DPG80C400HB Low Loss and Soft Recovery High Performance Fast Recovery Diode
Product Overview
The DPG80C400HB is a common cathode, high-performance fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. Applications include antiparallel diodes for high-frequency switching devices, antisaturation diodes, snubber diodes, freewheeling diodes, and rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). The device is housed in a TO-247 package, an industry-standard outline, and is RoHS compliant.
Product Attributes
- Brand: IXYS
- Part Number: DPG80C400HB
- Package: TO-247
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Construction: Common Cathode, HiPerFRED
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 400 | ||
| VRRSM | max. non-repetitive reverse blocking voltage | TVJ = 25C | V | 400 | ||
| IF | average forward current | TC = 25C | A | 40 | ||
| IF | average forward current | TC = 175C | A | 80 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | 400 | ||
| IRMS | RMS current | per terminal | A | 70 | ||
| VF | forward voltage drop | IF = 40 A; TVJ = 25C | V | 1.43 | 1.69 | |
| VF0 | threshold voltage | TVJ = 175C | V | 0.79 | ||
| IR | reverse current, drain current | VR = 400 V; TVJ = 25C | mA | 0.4 | ||
| IR | reverse current, drain current | VR = 400 V; TVJ = 175C | mA | 150 | ||
| RthJC | thermal resistance junction to case | K/W | 0.7 | |||
| RthCH | thermal resistance case to heatsink | K/W | 0.25 | |||
| Ptot | total power dissipation | TC = 25C | W | 215 | ||
| TVJ | virtual junction temperature | C | 175 | -55 | ||
| Tstg | storage temperature | C | 150 | -55 | ||
| Weight | g | 6 | ||||
| CJ | junction capacitance | VR = 200 V; f = 1 MHz | pF | 46 | ||
| rF | slope resistance for power loss calculation only | m | 7.1 | |||
| trr | reverse recovery time | IF = 40 A; diF/dt = 200 A/s; VR = 270 V; TVJ = 125C | ns | 45 | ||
| IRM | max. reverse recovery current | IF = 40 A; diF/dt = 200 A/s; VR = 270 V; TVJ = 125C | A | 8.5 | ||
| Qrr | reverse recovery charge | IF = 40 A; diF/dt = 200 A/s; VR = 270 V; TVJ = 125C | C | 1.14 | ||
| Erec | recovery energy | IF = 40 A; diF/dt = 200 A/s; VR = 270 V; TVJ = 125C | J | 1.44 |
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