12A Triac Semiconductor Device LGE BT138-600E-LGE Suitable for Inductive Load Switching Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The LGE BT138 series are 12A, 3 & 4 quadrant Triacs designed for inductive load switching and ON/OFF function applications. These silicon bidirectional devices feature singlesided trenching technology, mesa glass passivation, and multi-layer metallized electrodes for high blocking voltage and temperature stability. They are suitable for use in washing machines, induction motor starting circuits, vacuum cleaners, power tools, and motor speed control, heating regulation, and solid-state relay applications.
Product Attributes
- Brand: LGE
- Moisture Sensitivity: MSL Level 1, per J-STD-020
- Terminals: Matte Tin Finish
- Solderable per MIL-STD-202 Method 208
- Case Material: Molded Plastic
- Molding compound meet UL Flammability Classification Rating 94V-0
- Case: JEDEC TO-220AB, ITO-220AB, TO-263
Technical Specifications
| Parameter | Symbol | BT138-600 | BT138-800 | Units |
| MAXIMUM RATING | ||||
| R.M.S. On-State Current @ Tc=110 | IT(RMS) | 12 | 12 | A |
| Non-Repetitive Surge Peak On-State Current (f=50Hz, T=20ms) | ITSM | 120 | 120 | A |
| Non-Repetitive Surge Peak On-State Current (f=60Hz, T=16.7ms) | ITSM | 115 | 115 | A |
| I2t Value for Fusing (tp=10ms) | I2t | 72 | 72 | A2s |
| Critical Rate of Rise of On-State Current (IG=2IGT, tr100ns, F=120Hz, Tj=125) | di/dt | 50 | 50 | A/s |
| Repetitive peak Off-State voltage @ Tj=25 | VDRM/VRRM | 600 | 800 | V |
| Non repetitive surge peak off-state voltage (tp=10ms, Tj=25) | VDSM/VRSM | VDRM/VRRM+100 | VDRM/VRRM+100 | V |
| Peak Gate Current (tp=20s, Tj=125) | IGM | 4 | 4 | A |
| Average Gate Power Dissipation (Tj=125) | PG(AV) | 1 | 1 | W |
| Typical Thermal Resistance (Junction to Ambient) TO-220AB/TO-263 | RJA | 60 | 60 | /W |
| Typical Thermal Resistance (Junction to Ambient) TO-220AB Insulated | RJA | 45 | 45 | /W |
| Typical Thermal Resistance (Junction to Ambient) TO-220F Insulated | RJA | 60 | 60 | /W |
| Typical Thermal Resistance (Junction to Case (AC)) TO-220AB/TO-263 | RJC | 1.2 | 1.2 | /W |
| Typical Thermal Resistance (Junction to Case (AC)) TO-220AB Insulated | RJC | 2.1 | 2.1 | /W |
| Typical Thermal Resistance (Junction to Case (AC)) TO-220F Insulated | RJC | 2.5 | 2.5 | /W |
| Maximum Operating Junction temperature | TJ | -40~+125 | -40~+125 | |
| Storage temperature range | TSTG | -40~+150 | -40~+150 | |
| ELECTRICAL CHARACTERISTICS ( QUADRANTS) | ||||
| Gate Trigger Current (VD=12V,RL=100) | IGT | SW=10, CW=35, BW=50 | SW=10, CW=35, BW=50 | mA |
| Gate Trigger Voltage | VGT | 1.3 | 1.3 | V |
| Gate Non-Trigger Voltage (Tj=125) | VGD | 0.2 | 0.2 | V |
| Holding Current (IT=0.5A) | IH | SW=10, CW=40, BW=60 | SW=10, CW=40, BW=60 | mA |
| Latching Current (IG=1.2IGT) quadrant | IL | SW=30, CW=50, BW=70 | SW=30, CW=50, BW=70 | mA |
| Latching Current (IG=1.2IGT) quadrant | IL | SW=40, CW=60, BW=80 | SW=40, CW=60, BW=80 | mA |
| Critical Rate of Rise of Off-State Voltage (VD=2/3VDRM,Tj=125) | dv/dt | SW=200, CW=500, BW=1000 | SW=200, CW=500, BW=1000 | V/s |
| Critical Rate of Rise of Off-State Voltage at Commutation (Tj=125) | (dv/dt)c | 8 | 8 | V/s |
| ELECTRICAL CHARACTERISTICS ( QUADRANTS) | ||||
| Gate Trigger Current (VD=12V,RL=100) | IGT | D=5, E=10, F=25, G=50 (-) D=10, E=25, F=70, G=100 () | D=5, E=10, F=25, G=50 (-) D=10, E=25, F=70, G=100 () | mA |
| Gate Trigger Voltage | VGT | 1.3 | 1.3 | V |
| Gate Non-Trigger Voltage (Tj=125) | VGD | 0.2 | 0.2 | V |
| Holding Current (IT=0.5A) | IH | D=10, E=20, F=40, G=60 | D=10, E=20, F=40, G=60 | mA |
| Latching Current (IG=1.2IGT) quadrant | IL | D=10, E=30, F=50, G=70 | D=10, E=30, F=50, G=70 | mA |
| Latching Current (IG=1.2IGT) quadrant | IL | D=20, E=40, F=70, G=100 | D=20, E=40, F=70, G=100 | mA |
| Critical Rate of Rise of Off-State Voltage (VD=2/3VDRM,Tj=125) | dv/dt | D=20, E=50, F=100, G=200 | D=20, E=50, F=100, G=200 | V/s |
| Critical Rate of Rise of Off-State Voltage at Commutation (Tj=125) | (dv/dt)c | 10 | 10 | V/s |
| STATIC CHARACTERISTICS | ||||
| Peak On-State Voltage (ITM=32A,Tj=25) | VTM | 1.60 | 1.60 | V |
| Threshold Voltage (Tj=125) | VTO | 0.87 | 0.87 | V |
| Dynamic Resistance (Tj=125) | Rd | 36.6 | 36.6 | m |
| Repetitive Peak Off-Statte Current (VDRM=VRRM, Tj=25) | IDRM | 5 | 5 | A |
| Repetitive Peak Off-Statte Current (VDRM=VRRM, Tj=125) | IRRM | 1 | 1 | mA |
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