High Current NPN Transistor LRC L8050QLT1G 0.8A Collector Current Epitaxial Planar SOT23 Package
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Product Description
Product Overview
The L8050 is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD., designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and offers a high collector current capability of 0.8A. An NPN complement, the L8050, is also available. Pb-Free packages are offered, and an 'S-' prefix denotes devices suitable for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Type: NPN Silicon General Purpose Transistor
- Package: SOT-23
- Features: High current capacity in compact package (IC = 0.8A), Epitaxial planar type, Pb-Free Package available
- Certifications: AEC-Q101 Qualified and PPAP Capable (for 'S-' prefix devices)
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| MAXIMUM RATINGS | ||||||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-continuous | IC | 800 | mAdc | |||
| THERMAL CHARACTERISTICS (FR-5 Board) | ||||||
| Total Device Dissipation | PD | 225 | mW | TA=25C, Derate above 25C: 1.8 mW/C | ||
| Thermal Resistance,Junction to Ambient | RJA | 556 | C/W | |||
| THERMAL CHARACTERISTICS (Alumina Substrate) | ||||||
| Total Device Dissipation | PD | 300 | mW | TA=25C, Derate above 25C: 2.4 mW/C | ||
| Thermal Resistance,Junction to Ambient | RJA | 417 | C/W | |||
| Junction and Storage Temperature | Tj,Tstg | -55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | V | IC=1.0mA | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | V | IC=100 | ||
| Collector Cutoff Current | ICBO | 150 | nA | VCB=35V | ||
| Emitter Cutoff Current | IEBO | 150 | nA | VEB=4V | ||
| DC Current Gain | hFE | 100 | 600 | IC=100mA,VCE=1V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC=800mA, IB=80mA | ||
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