High reliability PNP silicon transistor LRC LMBT4403LT1G perfect for diverse electronic applications

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Product Description

LMBT4403LT1G General Purpose PNP Silicon Transistor

The LMBT4403LT1G is a general-purpose PNP silicon transistor from LESHAN RADIO COMPANY, LTD., designed for a wide range of electronic applications. It offers reliable performance with key electrical and thermal characteristics suitable for various circuit designs.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Device Marking: 2T
Compliance: RoHS, AEC-Q101 Qualified, PPAP Capable
Package: SOT-23 (TO-236AB)
Available in Tape & Reel: 3000/Tape & Reel (LMBT4403LT1G), 10000/Tape & Reel (S-LMBT4403LT3)
Automotive and Other Applications Prefix: S-

Technical Specifications

Characteristic	Symbol	Min	Max	Unit	Conditions
Maximum Ratings
CollectorEmitter Voltage	V CEO		40	Vdc
CollectorBase Voltage	V CBO		40	Vdc
EmitterBase Voltage	V EBO		5.0	Vdc
Collector Current Continuous	I C		600	mAdc
Total Device Dissipation (FR5 Board)	P D		225	mW	T A =25 C; Derate above 25C 1.8 mW/C
Total Device Dissipation (Alumina Substrate)	P D		300	mW	T A = 25C; Derate above 25C 2.4 mW/C
Thermal Resistance Junction to Ambient (FR5 Board)	R JA		556	C/W
Thermal Resistance Junction to Ambient (Alumina Substrate)	R JA		417	C/W
Junction and Storage Temperature	T J , T stg	55	+150	C
OFF Characteristics
CollectorEmitter Breakdown Voltage	V (BR)CEO	40		Vdc	(I C = 1.0 mAdc, I B = 0)
CollectorBase Breakdown Voltage	V (BR)CBO	40		Vdc	(I C = 0.1mAdc, I E = 0)
EmitterBase Breakdown Voltage	V (BR)EBO	5.0		Vdc	(I E = 0.1mAdc, I C = 0)
Base Cutoff Current	I BEV		0.1	Adc	(V CE = 35 Vdc, V EB = 0.4 Vdc)
Collector Cutoff Current	I CEX		0.1	Adc	(V CE = 35 Vdc, V EB = 0.4 Vdc)
ON Characteristics
DC Current Gain	hFE	30			(I C = 0.1 mAdc, V CE = 1.0 Vdc)
DC Current Gain	hFE	60			(I C = 1.0 mAdc, V CE = 1.0 Vdc)
DC Current Gain	hFE	100			(I C = 10 mAdc, V CE = 1.0 Vdc)
DC Current Gain	hFE	100	300		(I C = 150 mAdc, V CE = 2.0 Vdc)
DC Current Gain	hFE	20			(I C = 500 mAdc, V CE = 2.0 Vdc)
CollectorEmitter Saturation Voltage	VCE(sat)		0.4	Vdc	(I C = 150mAdc, I B = 15 mAdc)
CollectorEmitter Saturation Voltage	VCE(sat)		0.75	Vdc	(I C = 500 mAdc, I B = 50 mAdc)
BaseEmitter Saturation Voltage	V BE(sat)	0.75	0.95	Vdc	(I C = 150 mAdc, I B = 15 mAdc)
BaseEmitter Saturation Voltage	V BE(sat)		1.3	Vdc	(I C = 500 mAdc, I B = 50 mAdc)
SmallSignal Characteristics
CurrentGain Bandwidth Product	f T	200		MHz	(I C = 20mAdc, V CE= 10 Vdc, f = 100 MHz)
CollectorBase Capacitance	C cb		8.5	pF	(V CB= 10 Vdc, I E = 0, f = 1.0 MHz)
EmitterBase Capacitance	C eb		30	pF	(V BE = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance	h ie	1.5	15	k	(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio	h re	0.1	8.0	X 10 4	(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
SmallSignal Current Gain	h fe	60	500		(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Output Admittance	h oe	1.0	100	mhos	(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Switching Characteristics
Delay Time	t d		15	ns	(V CC = 30 Vdc, V EB = 2.0 Vdc, I C = 150mAdc, I B1 = 15 mAdc)
Rise Time	t r		20	ns	(V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc)
Storage Time	t s		225	ns
Fall Time	t f		30	ns