High Frequency Switching Littelfuse IXYS DSEI20-12A Diode with Soft Recovery Behavior and Low Losses
Product Overview
The DSEI 20-12A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a glass-passivated chip in an international standard TO-220 package, offering very short recovery times and extremely low losses at high switching frequencies. Its soft recovery behavior and low reverse recovery current (IRM) values contribute to high reliability circuit operation, reduced protection circuit needs, and low noise switching. This diode is ideal for use as an antiparallel diode for high-frequency switching devices, anti-saturation diode, snubber diode, and free-wheeling diode in various power electronics applications.
Product Attributes
- Brand: IXYS
- Package Type: TO-220
- Chip Technology: Glass passivated
- Certifications: Epoxy meets UL 94V-0
- Recovery Behavior: Soft recovery
Technical Specifications
| Symbol | Test Conditions | Type | Value | Unit |
|---|---|---|---|---|
| VRSM | V | 1200 | V | |
| VRRM | V | 1200 | V | |
| IFRMS | TVJ = TVJM | 70 | A | |
| IFAVM | TC = 85 C; rectangular, d = 0.5 | 17 | A | |
| IFRM | tP VJM | 220 | A | |
| IFSM | TVJ = 45 C; t = 10 ms (50 Hz), sine | 130 | A | |
| IFSM | t = 8.3 ms (60 Hz), sine | 140 | A | |
| IFSM | TVJ = 150 C; t = 10 ms (50 Hz), sine | 110 | A | |
| IFSM | t = 8.3 ms (60 Hz), sine | 120 | A | |
| I2t | TVJ = 45 C; t = 10 ms (50 Hz), sine | 85 | As | |
| I2t | t = 8.3 ms (60 Hz), sine | 80 | As | |
| I2t | TVJ = 150 C; t = 10 ms (50 Hz), sine | 60 | As | |
| I2t | t = 8.3 ms (60 Hz), sine | 60 | As | |
| TVJ | -40...+150 | C | ||
| TVJM | 150 | C | ||
| Tstg | -40...+150 | C | ||
| Ptot | TC = 25 C | 78 | W | |
| Md | Mounting torque | 0.4...0.6 | Nm | |
| Weight | 2 | g | ||
| IR | TVJ = 25 C; VR = VRRM | typ. | 750 | A |
| IR | TVJ = 25 C; VR = 0.8 VRRM | 250 | A | |
| IR | TVJ = 125 C; VR = 0.8 VRRM | 7 | mA | |
| VF | IF = 12 A; TVJ = 150 C | 1.87 | V | |
| VF | TVJ = 25 C | 2.15 | V | |
| VT0 | For power-loss calculations only | 1.65 | V | |
| rT | TVJ = TVJM | 18.2 | m | |
| RthJC | 1.6 | K/W | ||
| RthJA | 60 | K/W | ||
| trr | IF = 1 A; -di/dt = 100 A/ s; VR = 30 V; TVJ = 25 C | typ. | 40 | ns |
| trr | max. | 60 | ns | |
| IRM | VR = 540 V; IF = 20 A; -diF/dt = 100 A/ s | typ. | 7 | A |
| L | 0.05 H; TVJ = 100 C |
Features
- International standard package
- Glass passivated chips
- Very short recovery time
- Extremely low losses at high switching frequencies
- Low IRM-values
- Soft recovery behaviour
- Epoxy meets UL 94V-0
Applications
- Antiparallel diode for high frequency switching devices
- Anti saturation diode
- Snubber diode
- Free wheeling diode in converters and motor control circuits
- Rectifiers in switch mode power supplies (SMPS)
- Inductive heating and melting
- Uninterruptible power supplies (UPS)
- Ultrasonic cleaners and welders
Advantages
- High reliability circuit operation
- Low voltage peaks for reduced protection circuits
- Low noise switching
- Low losses
- Operating at lower temperature or space saving by reduced cooling
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