Unidirectional Phase Control SCR Littelfuse S6065KTP with 65 Amp RMS On State Current and High Voltage

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Product Description

Teccor Sxx65x & Sxx70x Series 65/70 Amp Standard SCRs

Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes of current at less than 1.5V potential. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage.

Product Attributes

Brand: Teccor
Certifications: UL recognized epoxy meeting flammability classification 94V-0

Technical Specifications

Symbol	Parameter	Test Conditions	Sxx65J	Sxx65K	Sxx70W	Unit
Main Features
IT(RMS)	RMS on-state current	TC = 75C	65			A
IT(RMS)	RMS on-state current	TC = 80C			70	A
VDRM/VRRM	Voltage capability		400 to 1000	400 to 1000	400 to 1000	V
IGT	Gate trigger current		50 MAX.	50 MAX.	50 MAX.	mA
Absolute Maximum Ratings
IT(RMS)	RMS on-state current	TC = 75C	65			A
IT(RMS)	RMS on-state current	TC = 80C			70	A
IT(AV)	Average on-state current	TC = 75C	41.0			A
IT(AV)	Average on-state current	TC = 80C			45.0	A
ITSM	Peak non-repetitive surge current	single half cycle; f = 50Hz; TJ (initial) = 25C	800	800	800	A
ITSM	Peak non-repetitive surge current	single half cycle; f = 60Hz; TJ (initial) = 25C	950	950	950	A
I2t	I2t Value for fusing	tp = 8.3 ms	3745	3745	3745	A2s
di/dt	Critical rate of rise of on-state current	f = 60Hz ; TJ = 125C	200	200	200	A/s
IGM	Peak gate current	TJ = 125C PW = S	5.0	5.0	5.0	A
PG(AV)	Average gate power dissipation	TJ = 125C	1.0	1.0	1.0	W
Tstg	Storage temperature range		-40 to 150	-40 to 150	-40 to 150	C
TJ	Operating junction temperature range		-40 to 125	-40 to 125	-40 to 125	C
Electrical Characteristics (TJ = 25C, unless otherwise specified)
IGT	Gate trigger current	VD = 12V; RL = 30	50 MAX.	50 MAX.	50 MAX.	mA
VGT	Gate trigger voltage	VD = 12V; RL = 30	2.0 MAX.	2.0 MAX.	2.0 MAX.	V
dv/dt	Critical rate of rise of off-state voltage	VD = VDRM; gate open; TJ = 100C	400V MIN. 650 V/s	400V MIN. 650 V/s	400V MIN. 650 V/s	V/s
dv/dt	Critical rate of rise of off-state voltage	VD = VDRM; gate open; TJ = 125C	400V MIN. 550 V/s	400V MIN. 550 V/s	400V MIN. 550 V/s	V/s
VGD	Gate non-trigger voltage	VD = VDRM; RL = 3.3 k; TJ = 125C	0.2 MIN.	0.2 MIN.	0.2 MIN.	V
IH	Holding current	IT = 400mA (initial)	80 MAX.	80 MAX.	80 MAX.	mA
tq	Turn-off time		35 MAX.	35 MAX.	35 MAX.	s
tgt	Gate-controlled turn-on time	IG = 2 x IGT; PW = 15s; IT = 140A	2.5 TYP.	2.5 TYP.	2.5 TYP.	s
Thermal Resistances
RR(J-C)	Junction to case (AC)		0.86	0.86	0.6	C/W
Static Characteristics
VTM	On-state voltage	65A Device IT = 130A; tp = 380s	1.8 MAX.			V
VTM	On-state voltage	70A Device IT = 140A; tp = 380s			1.8 MAX.	V
IDRM / IRRM	Peak on-state leakage current	VDRM / VRRM TJ = 25C	20 A	20 A	20 A	A
IDRM / IRRM	Peak on-state leakage current	VDRM / VRRM TJ = 100C	400800V 1500 MAX.	400800V 1500 MAX.	400800V 1500 MAX.	A
IDRM / IRRM	Peak on-state leakage current	VDRM / VRRM TJ = 125C	400V 600V 3000 MAX.	400V 600V 3000 MAX.	400V 600V 3000 MAX.	A