Silicon epitaxial transistor LRC L2SC3356WT1G designed for low noise and high frequency VHF UHF CATV

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Product Description

Product Overview

The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier applications in the VHF, UHF, and CATV bands. It offers excellent dynamic range and current characteristics, making it suitable for high-frequency amplification tasks.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material Compliance: RoHS requirements
Package Type: SC-70
Automotive Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)

Technical Specifications

Characteristic	Symbol	Min.	Typ.	Max.	Unit	Test Conditions
Collector Cutoff Current	ICBO		1.0		μA	VCB = 10 V, IE = 0
Emitter Cutoff Current	IEBO		1.0		μA	VEB = 1.0 V, IC = 0
DC Current Gain	hFE	82	170	270		VCE = 3 V, IC = 10 mA
Gain Bandwidth Product	fT		7		GHz	VCE = 10 V, IC = 20 mA
Feed-Back Capacitance	Cre**		0.55	1.0	pF	VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain	\|S21e\|2	2	11.5		dB	VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure	NF		1.1	2.0	dB	VCE = 10 V, IC = 7 mA, f = 1.0 GHz

Absolute Maximum Ratings

Rating	Symbol	Value	Unit	Conditions
Collector to Base Voltage	VCBO	20	V	TA = 25 °C
Collector to Emitter Voltage	VCEO	12	V	TA = 25 °C
Emitter to Base Voltage	VEBO	3.0	V	TA = 25 °C
Collector Current	IC	100	mA	TA = 25 °C
Total Power Dissipation	PT	150	mW	TA = 25 °C
Junction Temperature	Tj	150	°C
Storage Temperature	Tstg	-65 to +150	°C