Audio amplifier driver stage transistor LRC LBTP180Y3T1G PNP medium power device for general electronic

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Product Description

Product Overview

The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, with the S-prefix variant meeting AEC-Q101 qualification and PPAP capability for automotive applications. These devices comply with RoHS requirements and are Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS, Halogen Free
Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)

Technical Specifications

Parameter	Symbol	Limits	Unit	Notes
Peak base current	IBM	-200	mA
CollectorBase Voltage	VCBO	-100	V
CollectorEmitter Voltage	VCEO	-80	V
EmitterBase Voltage	VEBO	-5	V
Collector Current(DC)	IC	-1	A
Peak collector current	ICM	-1.5	A
Total Device Dissipation, FR4 Board	PD	550	mW	@ TA = 25C
Derate above 25C		225	mW/C
Thermal Resistance, JunctiontoAmbient	RJA	4.4	C/W
Thermal Resistance, JunctiontoCase	RJC	50	C/W
Junction and Storage temperature	TJ,Tstg	-65+150	C
Collector Cutoff Current	ICBO	-100	nA	(VCB = -30 V,IE = 0)
Collector Cutoff Current	ICBO	-250	nA	(VCB = -30 V,IE = 0,Tj = 125 C)
Emitter Cut-off Current	IEBO	-100	nA	(VEB =-5V, IC =0)
DC Current Gain	HFE	40	-	(VCE =-2V, IC =-5mA)
DC Current Gain	HFE	-	-	(VCE =-2V, IC =-150mA)
DC Current Gain	HFE	-	-	(VCE =-2V, IC =-500mA)
CollectorEmitter Saturation Voltage	VCE(sat)	-500	mV	(IC = 500 mA, IB = 50 mA)
Base-emitter voltage	VBE	-1	V	(IC = 500 mA,VCE = 2 V)
Transition Frequency	fT	50	MHz	(IC = 10 mA,VCE = 5 V,f = 100 MHz)
CollectorEmitter Breakdown Voltage	VBR(CEO)	-80	V	(IC = -1 mA, IB = 0)
CollectorBase Breakdown Voltage	VBR(CBO)	-100	V	(IC = -100 A, IE = 0)
EmitterBase Breakdown Voltage	VBR(EBO)	-5	V	(IE = -100 A, IC = 0)
Collector-Emitter cutoff Current	ICEO	-10	A	(VCE= -80V,IB=0)