dual general purpose transistor LRC S-LBC856BDW1T1G designed for automotive and control change needs

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Product Description

Product Overview

The LBC856BDW1T1G and S-LBC856BDW1T1G are dual general-purpose transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variants are AEC-Q101 qualified and PPAP capable. These transistors are compliant with RoHS requirements and Halogen Free materials.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS, Halogen Free
Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)

Technical Specifications

Model	Description	Collector-Base Voltage (VCBO)	Collector-Emitter Voltage (VCEO)	Emitter-Base Voltage (VEBO)	Collector Current (Continuous) (IC)	Total Device Dissipation (PD)	Thermal Resistance, Junction to Ambient (RJA)	Junction and Storage Temperature (TJ, Tstg)	Collector Cutoff Current (ICBO)	DC Current Gain (hFE)	Collector-Emitter Saturation Voltage (VCE(sat))	Base-Emitter Saturation Voltage (VBE(sat))	Base-Emitter Voltage (VBE(on))	Current-Gain Bandwidth Product (fT)	Output Capacitance (Cob)	Noise Figure (NF)
LBC856BDW1T1G S-LBC856BDW1T1G	Dual General Purpose Transistors	-80 V	-65 V	-5 V	-100 mA	250 mW	500 C/W	-55+150 C	-15 nA -4 nA (TA=150C)	290 - 475 320 (IC=-2.0 mA, VCE=-5.0 V)	-0.65 V -0.9 V (IC=-100 mA, IB=-5.0 mA)	-0.7 V -0.82 V (IC=-100 mA, IB=-5.0 mA)	-0.6 V -0.75 V (IC=-10 mA, VCE=-5.0 V)	100 MHz	10 pF	4.5 dB
LBC856BDW1T3G	Dual General Purpose Transistors	-80 V	-65 V	-5 V	-100 mA	250 mW	500 C/W	-55+150 C	-15 nA -4 nA (TA=150C)	290 - 475 320 (IC=-2.0 mA, VCE=-5.0 V)	-0.65 V -0.9 V (IC=-100 mA, IB=-5.0 mA)	-0.7 V -0.82 V (IC=-100 mA, IB=-5.0 mA)	-0.6 V -0.75 V (IC=-10 mA, VCE=-5.0 V)	100 MHz	10 pF	4.5 dB