High Voltage PNP Transistor LRC L2SA812SLT1G with 60 Volt Collector Base Voltage and PPAP Capability

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Product Description

Product Overview

The L2SA812SLT1G and S-L2SA812SLT1G are general-purpose PNP silicon transistors designed for various applications. They feature a high voltage rating of VCEO = -50 V and an epitaxial planar construction. These devices are RoHS compliant and Halogen Free. The S-prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capabilities.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material: Silicon
Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
Compliance: RoHS, Halogen Free

Technical Specifications

Parameter	Symbol	L2SA812SLT1G	S-L2SA812SLT1G	Unit
MAXIMUM RATINGS
EmitterBase Voltage	VEBO	-6		V
Collector Current Continuous	IC	-150		mA
CollectorEmitter Voltage	VCEO	-50		V
CollectorBase Voltage	VCBO	-60		V
Total Device Dissipation, FR5 Board @ TA = 25C	PD	200		mW
Derate above 25C		1.8		mW/C
Thermal Resistance, JunctiontoAmbient	RJA	556		C/W
Junction and Storage temperature	TJ,Tstg	55+150		C
ELECTRICAL CHARACTERISTICS
CollectorEmitter Breakdown Voltage	VBR(CEO)	-50		V
CollectorBase Breakdown Voltage	VBR(CBO)	-60		V
EmitterBase Breakdown Voltage	VBR(EBO)	-6		V
Collector-Base cut-off current	ICBO	-0.1		A
Emitter-Base cut-off current	IEBO	-0.1		A
CollectorEmitter cutoff Current	ICEO	-10		A
DC Current Gain	HFE	270	560
CollectorEmitter Saturation Voltage	VCE(sat)	-0.18 to -0.3		V
Base Emitter On Voltage	VBE	-0.58 to -0.68		V
CurrentGain Bandwidth Product	fT	180		MHz
Output Capacitance	Cobo	4.5		pF
DEVICE MARKING AND ORDERING INFORMATION
Device Marking		M7	M7
Shipping		3000/Tape&Reel	10000/Tape&Reel
Package		SOT23(TO-236)	SOT23(TO-236)