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Automotive PNP Silicon Driver Transistor S-LMBTA56LT1G with RoHS Halogen Free and AEC Q101 Compliance

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The LMBTA56LT1G and S-LMBTA56LT1G are PNP Silicon Driver Transistors designed for automotive and general applications. The 'S-' prefix denotes compliance with unique site and control change requirements, AEC-Q101 qualification, and PPAP capability. These devices are RoHS and Halogen Free compliant.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material: Silicon
  • Certifications: RoHS, Halogen Free, AEC-Q101 (for S- prefix)
  • Device Marking: 2GM

Technical Specifications

ParameterSymbolLMBTA56LT1GS-LMBTA56LT1GUnitNotes
CollectorEmitter VoltageVCEO-80-80V
CollectorBase VoltageVCBO-80-80V
EmitterBase VoltageVEBO-4-4V
Collector Current ContinuousIC-500-500mA
Total Device Dissipation, FR5 BoardPD1.81.8mW@ TA = 25C
Derate above 25C556556mW/C
JunctiontoAmbient Thermal ResistanceRJA225225C/WFR5 = 1.00.750.062 in.
Junction and Storage temperatureTJ,Tstg-55+150-55+150C
CollectorEmitter Breakdown VoltageVBR(CEO)-80-80VIC = -1 mA, IB = 0
EmitterBase Breakdown VoltageVBR(EBO)-4-4VIE = -100 A, IC = 0
CollectorBase Breakdown VoltageVBR(CBO)-80-80VIC= -100A, IE= 0
Collector Cutoff CurrentICES-0.1-0.1AVCE = - 60 V, IE = 0
Collector Cutoff CurrentICEO-10-10AVCE-80V, IB=0
Emitter-Base cut-off currentIEBO-100-100nAIC = 0, VEB = -6V
DC Current GainHFE100100IC = -10 mA, VCE = -1 V
DC Current GainHFE100100IC = -100 mA, VCE = -1 V
CollectorEmitter Saturation VoltageVCE(sat)-0.25-0.25VIC = -100 mA, IB = -10 mA
Base-Emitter turn on voltageVBE(on)-1.2-1.2VIC = -100 mA, VCE = -1 V
CurrentGain Bandwidth ProductfT5050MHzIC = -100mA, VCE= -1V, f = 100MHz
Output CapacitanceCobo5.35.3pFVCB=10V,IE=0,f=1MHz
Input CapacitanceCibo7878pFVEB=0.5V,IC=0,f=1MHz

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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