Silicon NPN Transistor S LMBT2222ALT1G Automotive Grade with AEC Q101 and PPAP Capable Certification
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Product Description
Product Overview
The LMBT2222ALT1G and S-LMBT2222ALT1G are NPN silicon general-purpose transistors designed for various applications. The S-prefix variant is specifically qualified for automotive and other applications requiring unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. These transistors comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS compliant, Halogen Free, AEC-Q101 qualified (S-prefix only)
- Compliance: PPAP capable (S-prefix only)
Technical Specifications
| Parameter | Symbol | LMBT2222ALT1G (Min) | LMBT2222ALT1G (Typ) | LMBT2222ALT1G (Max) | S-LMBT2222ALT1G (Min) | S-LMBT2222ALT1G (Typ) | S-LMBT2222ALT1G (Max) | Unit | Notes |
|---|---|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | 40 | V | |||||
| Collector-Base Voltage | VCBO | 75 | 75 | V | |||||
| Emitter-Base Voltage | VEBO | 6 | 6 | V | |||||
| Collector Current Continuous | IC | 600 | 600 | mA | |||||
| Total Device Dissipation, FR5 Board | PD | 1.8 | 1.8 | W | @ TA = 25C | ||||
| Derate above 25C | mW/C | ||||||||
| Thermal Resistance, JunctiontoAmbient | RJA | 556 | 556 | C/W | Note 1 | ||||
| Thermal Resistance, JunctiontoCase | RJC | 300 | 300 | C/W | |||||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | -55 | 150 | C | |||
| Collector Cutoff Current | ICBO | 0.01 | 0.01 | A | (VCB = 60 V, IE = 0) | ||||
| Collector Cutoff Current (TA = 125C) | ICBO | 10 | 10 | nA | (VCB = 60 V, IE = 0) | ||||
| Emitter Cutoff Current | IEBO | 10 | 10 | nA | (VEB = 3.0 V, IC = 0) | ||||
| Base Cutoff Current | IBL | 100 | 100 | nA | (VCE = 60 V, VEB(off) = 3.0 V) | ||||
| DC Current Gain | HFE | 35 | 50 | 35 | 50 | (IC = 0.1 mA, VCE = 10 V) | |||
| DC Current Gain | HFE | 75 | 75 | (IC = 1.0 mA, VCE = 10 V) | |||||
| DC Current Gain | HFE | 100 | 300 | 100 | 300 | (IC = 10 mA, VCE = 10 V) | |||
| DC Current Gain | HFE | 35 | 35 | (IC = 10 mA, VCE = 10 V,TA= 55C) | |||||
| DC Current Gain | HFE | 75 | 75 | (IC = 150 mA, VCE = 10 V) | |||||
| DC Current Gain | HFE | (IC = 150 mA, VCE = 1.0 V) | |||||||
| DC Current Gain | HFE | (IC = 500 mA, VCE = 10 V) | |||||||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.3 | 0.3 | V | (IC = 150 mA, IB = 15 mA) | ||||
| CollectorEmitter Saturation Voltage | VCE(sat) | 1.2 | 1.2 | V | (IC = 500 mA, IB = 50 mA) | ||||
| BaseEmitter Saturation Voltage | VBE(sat) | 0.6 | 0.6 | V | (IC = 150 mA, IB = 15 mA) | ||||
| BaseEmitter Saturation Voltage | VBE(sat) | 1.0 | 1.0 | V | (IC = 500 mA, IB = 50 mA) | ||||
| Current-Gain Bandwidth Product | fT | 300 | 300 | MHz | (IC = 20mA, VCE= 20V, f = 100MHz) | ||||
| Output Capacitance | Cobo | 8 | 8 | pF | (VCB = 5.0 V, IE = 0, f = 1.0 MHz) | ||||
| Input Capacitance | Cibo | 25 | 25 | pF | (VEB = 0.5 V, IC = 0, f = 1.0 MHz) | ||||
| Collector-Emitter cutoff Current | ICEO | 10 | 10 | A | (VCE 40V, IB=0) | ||||
| Delay Time | td | 10 | 10 | ns | (VCC = 30 V,VEB=-0.5V, IC = 150mA, IB1 = 15 mA) | ||||
| Rise Time | tr | 25 | 25 | ns | (VCC = 30 V, IC = 150 mA,IB1 = IB2 = 15 mA) | ||||
| Storage Time | ts | 225 | 225 | ns | (VCC = 30 V, IC = 150 mA,IB1 = IB2 = 15 mA) | ||||
| Fall Time | tf | 60 | 60 | ns | (VCC = 30 V, IC = 150 mA,IB1 = IB2 = 15 mA) | ||||
| Device Marking | 1P | 1P | |||||||
| Shipping | LMBT2222ALT1G 10000/Tape&Reel | S-LMBT2222ALT1G 3000/Tape&Reel |
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