NPN Silicon Transistor LRC L2SC2412KQLT1G AECQ101 Qualified RoHS Compliant General Purpose Packaging

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Product Description

Product Overview

The L2SC2412KQLT1G and its variants are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. They are AEC-Q101 qualified and PPAP capable, with materials compliant with RoHS requirements and Halogen Free. These transistors offer reliable performance with key electrical characteristics and are available in Tape & Reel packaging.

Product Attributes

Brand: Leshan Radio Company, LTD.
Origin: China
Material Compliance: RoHS, Halogen Free
Certifications: AEC-Q101 qualified, PPAP capable
Package: SOT23

Technical Specifications

Model	Description	Collector-Emitter Voltage (VCEO)	Collector Current (IC)	Collector Power Dissipation (PC)	Junction Temperature (Tj)	Storage Temperature (Tstg)	Collector-Emitter Breakdown Voltage (V(BR)CEO)	Emitter-Base Breakdown Voltage (V(BR)EBO)	Collector-Base Breakdown voltage (V(BR)CBO)	Collector Cutoff Current (ICBO)	Emitter Cutoff Current (IEBO)	Collector-Emitter Saturation Voltage (VCE(sat))	DC current transfer ratio (hFE)	Transition frequency (fT)	Output capacitance (Cob)	Device Marking	Shipping
L2SC2412KQLT1G	General Purpose Transistor	50 V	150 mA	200 mW	150	-55~+150	50 V	7 V	60 V	0.1 A	0.1 A	0.4 V (Typ. @ IC=50 mA, IB=5mA)	120 - 270 (Typ. @ VCE = 6 V, IC =1mA)	3.5 MHz (Typ. @ VCE = 12 V, IE =2mA)	2 pF (Typ. @ VCB = 12 V, IE =0A)	BQ	3000/Tape&Reel
S-L2SC2412KQLT1G	General Purpose Transistor (Automotive)	50 V	150 mA	200 mW	150	-55~+150	50 V	7 V	60 V	0.1 A	0.1 A	0.4 V (Typ. @ IC=50 mA, IB=5mA)	120 - 270 (Typ. @ VCE = 6 V, IC =1mA)	3.5 MHz (Typ. @ VCE = 12 V, IE =2mA)	2 pF (Typ. @ VCB = 12 V, IE =0A)	BQ	10000/Tape&Reel