PNP Silicon High Voltage Transistor LRC LMBT6520LT1G Suitable for Electronic Circuit Applications

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Product Description

LMBT6520LT1G, S-LMBT6520LT1G - PNP Silicon High Voltage Transistor

The LMBT6520LT1G and S-LMBT6520LT1G are PNP silicon transistors designed for high voltage applications. They offer a combination of high breakdown voltages and moderate current handling capabilities, making them suitable for various electronic circuits.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Compliance: RoHS requirements, AEC-Q101 Qualified and PPAP Capable (for S- prefix)
Package: SOT-23
Configuration: PNP

Technical Specifications

Characteristic	Symbol	Value	Unit	Conditions
Maximum Ratings
CollectorEmitter Voltage	V CEO	350	Vdc
CollectorBase Voltage	V CBO	350	Vdc
EmitterBase Voltage	V EBO	5.0	Vdc
Base Current	I B	250	mA
Collector Current Continuous	I C	500	mAdc
Total Device Dissipation (FR5 Board)	PD	225	mW	TA = 25C; Derate above 25C 1.8 mW/C
Thermal Resistance, Junction to Ambient (FR5 Board)	RJA	556	C/W
Total Device Dissipation (Alumina Substrate)	PD	300	mW	TA = 25C; Derate above 25C 2.4 mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	RJA	417	C/W
Junction and Storage Temperature	TJ , Tstg	55 to +150	C
Off Characteristics
CollectorEmitter Breakdown Voltage	V (BR)CEO	350	Vdc	I C = 1.0 mA
CollectorBase Breakdown Voltage	V (BR)CBO	350	Vdc	I E = 100 A
EmitterBase Breakdown Voltage	V (BR)EBO	5.0	Vdc	I E = 10 A
Collector Cutoff Current	I CBO	50	nA	V CB = 250V
Emitter Cutoff Current	I EBO	50	nA	V EB = 4.0V
On Characteristics
DC Current Gain	hFE	20200		See detailed conditions below
CollectorEmitter Saturation Voltage	VCE(sat)	0.30 to 1.0	Vdc	See detailed conditions below
Base Emitter Saturation Voltage	VBE(sat)	0.75 to 0.90	Vdc	See detailed conditions below
BaseEmitter On Voltage	V BE(on)	2.0	Vdc	I C = 100mAdc, V CE = 10V
Small-Signal Characteristics
Current GainBandwidth Product	f T	40200	MHz	V CE = 20 V, I C = 10mA, f = 20 MHz
Collector Base Capacitance	C cb	6.0	pF	V CB = 20 V, f = 1.0 MHz
Emitter Base Capacitance	C eb	100	pF	V EB= 0.5 V, f = 1.0 MHz