NPN silicon transistor LRC LBC817-25LT1G for amplification and switching in compact SOT23 electronic package

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Product Description

Product Overview

The LBC817 series are general-purpose NPN silicon transistors designed for various electronic applications. They offer a range of DC current gain (hFE) options, making them suitable for amplification and switching tasks. These transistors are available in the compact SOT-23 package.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Origin: NPN Silicon
Certifications: RoHS compliant
Device Marking: LBC81716LT1G = 6A; LBC81725LT1G = 6B; LBC81740LT1G = 6C

Technical Specifications

Characteristic	Symbol	LBC817-16	LBC817-25	LBC817-40	Unit	Conditions
CollectorEmitter Voltage	V CEO	45	45	45	V
CollectorBase Voltage	V CBO	50	50	50	V
EmitterBase Voltage	V EBO	5.0	5.0	5.0	V
Collector Current Continuous	I C	500	500	500	mAdc
Total Device Dissipation (FR5 Board)	P D	225	225	225	mW	TA = 25C
Derate above 25C		1.8	1.8	1.8	mW/C
Thermal Resistance, Junction to Ambient (FR5 Board)	R JA	556	556	556	C/W
Total Device Dissipation (Alumina Substrate)	P D	300	300	300	mW	TA = 25C
Derate above 25C		2.4	2.4	2.4	mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	R JA	417	417	417	C/W
Junction and Storage Temperature	T J , T stg	55 to +150	55 to +150	55 to +150	C
CollectorEmitter Breakdown Voltage	V (BR)CEO	45	45	45	V	IC = 10 mA
CollectorEmitter Breakdown Voltage	V (BR)CES	50	50	50	V	VEB = 0, IC = 10 A
EmitterBase Breakdown Voltage	V (BR)EBO	5.0	5.0	5.0	V	IE = 1.0 A
Collector Cutoff Current	I CBO	100	100	100	nA	VCB = 20 V
Collector Cutoff Current	I CBO	5.0	5.0	5.0	A	VCB = 20 V, TA = 150C
DC Current Gain	h FE	100250	160400	250600		IC= 100 mA, V CE = 1.0 V
CollectorEmitter Saturation Voltage	V CE(sat)	0.7	0.7	0.7	V	IC = 500 mA, IB = 50 mA
BaseEmitter On Voltage	V BE(on)	1.2	1.2	1.2	V	IC = 500 mA, V CE = 1.0 V
CurrentGain Bandwidth Product	f T	100	100	100	MHz	IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz
Output Capacitance	C obo	10	10	10	pF	V CB = 10 V, f = 1.0 MHz