Fast response transistor luJing 2SA1213 suitable for amplification and switching in power electronic devices

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Product Description

Product Overview

The 2SA1213 is a PNP transistor designed for high-speed switching applications. It features a low saturation voltage and a small flat package, making it suitable for power applications up to 1-2W when mounted on a ceramic substrate. This transistor is ideal for general-purpose amplification and switching circuits requiring fast response times.

Product Attributes

Brand: Lujing Semiconductor (implied by URL)
Origin: China (implied by URL)
Material: Plastic-Encapsulated Transistor
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS AND CHARACTERISTICS
Collector- base breakdown voltage	VCBO	Ic= -100 A IE=0			-50	V
Collector- emitter breakdown voltage	VCEO	Ic= -10 mA IB=0			-50	V
Emitter - base breakdown voltage	VEBO	IE= -100A IC=0			-5	V
Collector-base cut-off current	ICBO	VCB= -50 V , IE=0			-100	nA
Emitter cut-off current	IEBO	VEB= -5V , IC=0			-100	nA
Collector-emitter saturation voltage	VCE(sat)	IC=-1 A, IB=- 50mA			-0.5	V
Base - emitter saturation voltage	VBE(sat)	IC=-1 A, IB=- 50mA			-1.2	V
DC current gain	hFE(1)	VCE= -2V, IC= -0.5A	70		240
DC current gain	hFE(2)	VCE= -2 V, IC= -2A	20
Turn-on time	ton			0.1		us
Storage time	tstg			1.0		us
Fall time	tf			0.1		us
Collector output capacitance	Cob	VCB= -10V, IE= 0			40	pF
Transition frequency	fT	VCE= -2V, IC= -0.5A ,f=1MHz		120		MHz
MAXIMUM RATINGS
Collector - Base Voltage	VCBO				-50	V
Collector - Emitter Voltage	VCEO				-50	V
Emitter - Base Voltage	VEBO				-5	V
Collector Current - Continuous	IC				-2	A
Base Current - Continuous	IB				-0.4	A
Collector Power Dissipation	PC	(mounted on ceramic substrate)		1 to 2		W
Collector Power Dissipation	PC				500	mW
Junction Temperature	TJ				150	C
Storage Temperature range	Tstg		-55		150	C