NPN Silicon General Purpose Transistor LRC L8050PLT1G Offering Compact SOT-23 Package and Performance

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Product Description

Product Overview

The L8050 is an NPN silicon general-purpose transistor from LESHAN RADIO COMPANY, LTD., designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and offers an NPN complement, the L8050. A Pb-Free package option is available.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Type: NPN Silicon General Purpose Transistor
Package: SOT-23
Certifications: AEC-Q101 Qualified and PPAP Capable (for 'S-' prefix variants)
Pb-Free Option: Available

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCEO			25	V
Collector-Base Voltage	VCBO			40	V
Emitter-Base Voltage	VEBO			5	V
Collector Current-Continuous	IC			800	mAdc
Total Device Dissipation (FR-5 Board)	PD			225	mW	TA=25C, Derate above 25C: 1.8 mW/C
Thermal Resistance (Junction to Ambient, FR-5 Board)	RJ A			556	C/W
Total Device Dissipation (Alumina Substrate)	PD			300	mW	TA=25C, Derate above 25C: 2.4 mW/C
Thermal Resistance (Junction to Ambient, Alumina Substrate)	RJ A			417	C/W
Junction and Storage Temperature	Tj,Tstg	-55		+150	C
Collector-Emitter Breakdown Voltage	V(BR)CEO	25			V	IC=1.0mA
Emitter-Base Breakdown Voltage	V(BR)EBO	5			V	IE=100
Collector-Base Breakdown Voltage	V(BR)CBO	40			V	IC=100
Collector Cutoff Current	ICBO			150	nA	VCB=35V
Emitter Cutoff Current	IEBO			150	nA	VEB=4V
DC Current Gain	hFE	100		600		IC=100mA,VCE=1V (hFE ranges: P:100~200, Q:150~300, R:200-400, S:300-600)
Collector-Emitter Saturation Voltage	VCE(sat)			0.5	V	IC=800mA, IB=80mA