AEC Q101 qualified PNP transistor LRC L9015SLT1G offering stable operation in automotive circuits

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Product Description

Product Overview

The L9015 series are general-purpose PNP silicon transistors from LESHAN RADIO COMPANY, LTD. They are complementary to the L9014 and are available in SOT-23 packages. These transistors are suitable for various applications requiring reliable performance and are AEC-Q101 qualified for automotive and other demanding applications.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Certifications: RoHS compliant, AEC-Q101 Qualified (S-prefix)

Technical Specifications

Symbol	Characteristic	L9015QLT1G Series	Unit	Notes
VCEO	Collector-Emitter Voltage	-45	V
VCBO	Collector-Base Voltage	-50	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current-Continuous	-100	mA
PD	Total Device Dissipation (FR-5 Board)	225	mW	Derate above 25C: 1.8 mW/C
RJA	Thermal Resistance, Junction to Ambient (FR-5 Board)	556	C/W
PD	Total Device Dissipation (Alumina Substrate)	300	mW	Derate above 25C: 2.4 mW/C
RJA	Thermal Resistance, Junction to Ambient (Alumina Substrate)	417	C/W
TJ, Tstg	Junction and Storage Temperature	-55 to +150	C
V(BR)CEO	Collector-Emitter Breakdown Voltage	-45	V	IC=-1.0mA
V(BR)EBO	Emitter-Base Breakdown Voltage	-5	V	IE=-100A
V(BR)CBO	Collector-Base Breakdown Voltage	-50	V	IC=-100A
ICBO	Collector Cutoff Current	-100	nA	VCB=-40V
IEBO	Emitter Cutoff Current	-100	nA	VEB=-3V
hFE	DC Current Gain	150-600		IC=-1mA, VCE=-5V (Q/R/S variants: 150-300 / 200-400 / 300-600)
VCE(sat)	Collector-Emitter Saturation Voltage	-0.3	V	IC=-100mA, IB=-5mA