High transition frequency NPN transistor luJing MMBTH10 with robust collector emitter voltage rating
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MOQ:
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Delivery Time:
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Product Description
Product Overview
NPN epitaxial planar bipolar transistor designed for general purpose applications. Key features include high transition frequency and power dissipation capabilities.
Product Attributes
- Brand: Lujing (implied by URL)
- Origin: China (implied by URL)
- Package: SOT-23 Plastic Encapsulate
- Polarity: Color band denotes cathode end
- Mounting Position: Any
Technical Specifications
| Symbol | Parameter | Test conditions | MIN | MAX | Units |
| VCBO | Collector-Base Voltage | 30 | V | ||
| VCEO | Collector-Emitter Voltage | 25 | V | ||
| VEBO | Emitter-Base Voltage | 3 | V | ||
| IC | Collector Current -Continuous | 50 | mA | ||
| PC | Collector Dissipation | (PC=350mW) | 350 | mW | |
| Tj,Tstg | Junction and Storage Temperature | -55 | 150 | C | |
| V(BR)CBO | Collector-base breakdown voltage | IC=100A,IE=0 | 30 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage | IC=0.1mA,IB=0 | 25 | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A,IC=0 | 3 | V | |
| ICBO | Collector cut-off current | VCB=25V,IE=0 | 0.1 | A | |
| IEBO | Emitter cut-off current | VEB=2V,IC=0 | 0.1 | A | |
| hFE | DC current gain | VCE=10V,IC=4.0mA | 60 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=4.0mA, IB= 0.4mA | 0.5 | V | |
| VBE(on) | Base-emitter on voltage | IC=4.0mA, VCE=10V | 0.95 | V | |
| fT | Transition frequency | VCE=10V, IC= 4.0mA, f=100MHz | 650 | MHz |
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Hefei Purple Horn E-Commerce Co., Ltd.
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Sellina