Compact SOT-23 Package NPN Silicon Transistor LRC L8050HQLT1G with 1.5 Amp Collector Current Capacity
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Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. L8050H series are NPN Silicon General Purpose Transistors designed for high current capacity in a compact SOT-23 package. These epitaxial planar type transistors offer an IC of 1.5 A and have an NPN complement, the L8050H. Pb-Free packages are available. An 'S-' prefix denotes devices qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Type: NPN Silicon General Purpose Transistor
- Package: SOT-23
- Features: High current capacity, compact package, Epitaxial planar type.
- Availability: Pb-Free Package available.
- Automotive Qualification: S- prefix for AEC-Q101 Qualified and PPAP Capable devices.
Technical Specifications
| Device Marking | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Total Device Dissipation (PD) FR-5 Board | Thermal Resistance (RJA) FR-5 Board | Total Device Dissipation (PD) Alumina Substrate | Thermal Resistance (RJA) Alumina Substrate | Junction and Storage Temperature (Tj, Tstg) | Collector Cutoff Current (ICBO) | Emitter Cutoff Current (IEBO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(S)) |
| L8050HPLT1G / L8050HPLT3G | 25 V | 1500 mAdc | 225 mW @ TA=25C (Derate 1.8 mW/C) | 556 C/W | 300 mW @ TA=25C (Derate 2.4 mW/C) | 417 C/W | -55 to +150 C | 150 nA @ VCB=35V | 150 nA @ VEB=4V | 100 - 600 | - 0.5 V @ IC=800mA, IB=80mA |
| L8050HQLT1G / L8050HQLT3G | 25 V | 1500 mAdc | 225 mW @ TA=25C (Derate 1.8 mW/C) | 556 C/W | 300 mW @ TA=25C (Derate 2.4 mW/C) | 417 C/W | -55 to +150 C | 150 nA @ VCB=35V | 150 nA @ VEB=4V | 100 - 600 | - 0.5 V @ IC=800mA, IB=80mA |
| L8050HRLT1G / L8050HRLT3G | 25 V | 1500 mAdc | 225 mW @ TA=25C (Derate 1.8 mW/C) | 556 C/W | 300 mW @ TA=25C (Derate 2.4 mW/C) | 417 C/W | -55 to +150 C | 150 nA @ VCB=35V | 150 nA @ VEB=4V | 100 - 600 | - 0.5 V @ IC=800mA, IB=80mA |
| L8050HSLT1G / L8050HSLT3G | 25 V | 1500 mAdc | 225 mW @ TA=25C (Derate 1.8 mW/C) | 556 C/W | 300 mW @ TA=25C (Derate 2.4 mW/C) | 417 C/W | -55 to +150 C | 150 nA @ VCB=35V | 150 nA @ VEB=4V | 100 - 600 | - 0.5 V @ IC=800mA, IB=80mA |
| S-L8050HPLT1G / S-L8050HPLT3G | 25 V | 1500 mAdc | 225 mW @ TA=25C (Derate 1.8 mW/C) | 556 C/W | 300 mW @ TA=25C (Derate 2.4 mW/C) | 417 C/W | -55 to +150 C | 150 nA @ VCB=35V | 150 nA @ VEB=4V | 100 - 600 | - 0.5 V @ IC=800mA, IB=80mA |
| S-L8050HQLT1G / S-L8050HQLT3G | 25 V | 1500 mAdc | 225 mW @ TA=25C (Derate 1.8 mW/C) | 556 C/W | 300 mW @ TA=25C (Derate 2.4 mW/C) | 417 C/W | -55 to +150 C | 150 nA @ VCB=35V | 150 nA @ VEB=4V | 100 - 600 | - 0.5 V @ IC=800mA, IB=80mA |
| S-L8050HRLT1G / S-L8050HRLT3G | 25 V | 1500 mAdc | 225 mW @ TA=25C (Derate 1.8 mW/C) | 556 C/W | 300 mW @ TA=25C (Derate 2.4 mW/C) | 417 C/W | -55 to +150 C | 150 nA @ VCB=35V | 150 nA @ VEB=4V | 100 - 600 | - 0.5 V @ IC=800mA, IB=80mA |
| S-L8050HSLT1G / S-L8050HSLT3G | 25 V | 1500 mAdc | 225 mW @ TA=25C (Derate 1.8 mW/C) | 556 C/W | 300 mW @ TA=25C (Derate 2.4 mW/C) | 417 C/W | -55 to +150 C | 150 nA @ VCB=35V | 150 nA @ VEB=4V | 100 - 600 | - 0.5 V @ IC=800mA, IB=80mA |
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