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High Current PNP Medium Power Transistor S-LBTP180Y3T1G Designed for Automotive and Audio Amplifier

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Product Description

Product Overview

The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, with the S-prefix variant meeting AEC-Q101 qualification and PPAP capability for automotive applications requiring unique site and control change requirements. The materials comply with RoHS requirements and are Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix variant)
  • PPAP Capable: Yes (S-prefix variant)

Technical Specifications

ParameterSymbolLBTP180Y3T1G / S-LBTP180Y3T1GUnitNotes
Maximum Ratings
Peak base currentIBM-200mA
CollectorBase VoltageVCBO-100V
CollectorEmitter VoltageVCEO-80V
EmitterBase VoltageVEBO-5V
Collector Current(DC)IC-1A
Peak collector currentICM-1.5A
Thermal Characteristics
Total Device Dissipation, FR4 BoardPD550mW@ TA = 25C, PCB Size:30.0mm25.0mm1.6mm,FR-4 Board
Derate above 25C2.25mW/C
Thermal Resistance, JunctiontoAmbientRJA4.4C/W
Junction and Storage temperatureTJ,Tstg-65 ~ +150C
Electrical Characteristics
Collector Cutoff CurrentICBO-100nAVCB = -30 V,IE = 0, Ta = 25C
Collector Cutoff CurrentICBO-100nAVCB = -30 V,IE = 0, Tj = 125 C
Emitter Cut-off CurrentIEBO-100nAVEB =-5V, IC =0, Ta = 25C
DC Current GainHFE40-VCE =-2V, IC =-5mA, Ta = 25C
DC Current GainHFE--VCE =-2V, IC =-150mA, Ta = 25C
DC Current GainHFE--VCE =-2V, IC =-500mA, Ta = 25C
CollectorEmitter Saturation VoltageVCE(sat)-500mVIC = 500 mA, IB = 50 mA, Ta = 25C
Base-emitter voltageVBE-1VIC = 500 mA,VCE = 2 V, Ta = 25C
Transition FrequencyfT50MHzIC = 10 mA,VCE = 5 V,f = 100 MHz, Ta = 25C

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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