NPN Transistor LRC LBC847BN3T5G Featuring RoHS Compliance and Halogen Free Material for Electronics

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Product Description

Product Overview

The LBC847BN3T5G and S-LBC847BN3T5G are NPN silicon general-purpose transistors designed for various applications. The 'S-' prefix denotes suitability for automotive and other applications with unique site and control change requirements, offering AEC-Q101 qualification and PPAP capability. These devices exhibit good performance characteristics, including high current gain and low saturation voltages, making them versatile components for electronic circuits.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS requirements and Halogen Free
Certifications: AEC-Q101 qualified (for S- prefix)
Moisture Sensitivity Level: 1
ESD Rating (Human Body Model): >4000 V
ESD Rating (Machine Model): >400 V

Technical Specifications

Parameter	Symbol	LBC847BN3T5G / S-LBC847BN3T5G (Min.)	LBC847BN3T5G / S-LBC847BN3T5G (Typ.)	LBC847BN3T5G / S-LBC847BN3T5G (Max.)	Unit
MAXIMUM RATINGS
CollectorEmitter Voltage	VCEO			45	V
CollectorBase Voltage	VCBO			50	V
EmitterBase Voltage	VEBO			6	V
Collector Current Continuous	IC			100	mA
Total Device Dissipation, FR5 Board	PD			250	mW
Thermal Resistance, JunctiontoAmbient	RJA			500	C/W
Junction and Storage temperature	TJ,Tstg	-55		150	C
ELECTRICAL CHARACTERISTICS (Ta= 25C)
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage	VBR(CEO)	45	-	-	V
CollectorBase Breakdown Voltage	VBR(CBO)	50	-	-	V
EmitterBase Breakdown Voltage	VBR(EBO)	6	-	-	V
Collector Cutoff Current	ICBO	-	-	50	nA
ON CHARACTERISTICS
DC Current Gain	HFE	200	290	450	-
CollectorEmitter Saturation Voltage	VCE(sat)	-	0.25	-	V
CollectorEmitter Saturation Voltage	VCE(sat)	-	-	0.4	V
BaseEmitter Saturation Voltage	VBE(sat)	-	0.7	-	V
BaseEmitter Saturation Voltage	VBE(sat)	-	-	0.9	V
BaseEmitter Voltage	VBE(on)	-	0.77	-	V
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product	fT	-	100	-	MHz
Output Capacitance	Cobo	-	-	4.5	pF
Noise Figure	NF	-	-	10	dB