Dual General Purpose NPN Transistors LRC LBC846BDW1T1G Suitable for Various Electronic Applications

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Product Description

Product Overview

The LBC846BDW1T1G and S-LBC846BDW1T1G are dual general-purpose NPN transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variants are AEC-Q101 qualified and PPAP capable. These transistors are compliant with RoHS requirements and Halogen Free materials.

Product Attributes

Brand: Leshan Radio Company, LTD.
Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix variants)
Material Compliance: RoHS, Halogen Free

Technical Specifications

Part Number	S-Part Number	Description	Collector-Emitter Voltage (VCEO)	Collector Current (IC)	Emitter-Base Voltage (VEBO)	Total Device Dissipation (PD)	Thermal Resistance (RJA)
LBC846BDW1T1G	S-LBC846BDW1T1G	Dual General Purpose Transistors NPN Duals	65 V	100 mA	6 V	380 mW (@ TA = 25C)	250 C/W
LBC846BDW1T3G	S-LBC846BDW1T3G	Dual General Purpose Transistors NPN Duals	65 V	100 mA	6 V	380 mW (@ TA = 25C)	250 C/W

Parameter	Symbol	Min.	Typ.	Max.	Unit
Collector-Emitter Breakdown Voltage (IC = 10 mA)	VBR(CEO)	65	-	-	V
Collector-Emitter Breakdown Voltage (IC = 10 A, VEB = 0)	VBR(CES)	80	-	-	V
Collector-Base Breakdown Voltage (IC = 10 A)	VBR(CBO)	80	-	-	V
Emitter-Base Breakdown Voltage (IE = 1.0 A)	VBR(EBO)	-	-	6	V
Collector-Base Cutoff Current (VCB = 30 V)	ICBO	-	-	4.5	nA
Collector-Base Cutoff Current (VCB = 30 V, TA = 150C)	ICBO	-	-	15	A
DC Current Gain (IC = 2.0 mA, VCE = 5 V)	HFE	200	450	-	-
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	VCE(sat)	-	0.25	-	V
Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)	VCE(sat)	-	0.7	-	V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	VBE(sat)	-	0.9	-	V
Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)	VBE(sat)	-	1.1	-	V
Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)	VBE(on)	-	0.6	-	V
Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V)	VBE(on)	-	0.7	-	V
Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz)	fT	580	660	700	MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)	Cobo	-	-	15	pF
Noise Figure (IC= 0.2 mA, VCE=5.0 V, RS=2.0 k, f = 1.0 kHz,BW = 200 Hz)	NF	-	-	10	dB