LBSS5250Y3T1G transistor medium power PNP type with halogen free materials and automotive certifications

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Product Description

Product Overview

The LBSS5250Y3T1G and S-LBSS5250Y3T1G are medium power PNP transistors designed for driver applications. They offer low saturation voltage and high-speed switching capabilities. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements. The materials comply with RoHS requirements and are Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS, Halogen Free
Certifications: AEC-Q101 qualified and PPAP capable (S-prefix)
Package: SOT89

Technical Specifications

Parameter	Symbol	LBSS5250Y3T1G / S-LBSS5250Y3T1G	Unit	Notes
CollectorBase Voltage	VCBO	-50	V
CollectorEmitter Voltage	VCEO	-50	V
EmitterBase Voltage	VEBO	-6	V
Collector Current	IC	-2	A
Collector Current (Pulse)	ICP	-4	A
Total Device Dissipation (FR-4 Board @ TA = 25C)	PD	550	mW	PCB Size:30.0mm25.0mm1.6mm,FR-4 Board
Derate above 25C		225	mW/C
Thermal Resistance, JunctiontoAmbient	RJA	4.4	C/W
Junction and Storage Temperature	TJ,Tstg	-55+150	C
Collector-emitter breakdown voltage	BVCEO	-50	V	(IC = -1mA)
Collector-base breakdown voltage	BVCBO	-50	V	(IC = -100A)
Emitter-base breakdown voltage	BVEBO	-6	V	(IE = -100A)
Collector Cutoff Current	ICBO	-1	A	(VCB = -50V,IE = 0)
Emitter Cut-off Current	IEBO	-1	A	(VEB =-4V, IC =0)
Collector-Emitter cutoff Current	ICEO	-10	A	(VCE-50V, IB=0)
DC Current Gain	HFE	180 - 450		(VCE = -2V, IC = -50mA)
CollectorEmitter Saturation Voltage	VCE(sat)	-200 -400	mV	(IC = -700mA, IB = -35mA)
Transition Frequency	fT	320	MHz	(VCE =-10V, IE =300mA, f=100MHz)
Collector Output Capacitance	Cob	22	pF	(VCB =-10V, IE =0A, f=1MHz)