Silicon Transistor LRC LBC850CLT1G Offering Low Saturation Voltage and High Current Gain for Circuits

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Product Description

Product Overview

The LBC850CLT1G and S-LBC850CLT1G are NPN silicon general-purpose transistors designed for a wide range of applications. They offer excellent performance with high current gain and low saturation voltages. The S-prefix variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications with stringent control change requirements. These devices are RoHS compliant and Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Product Series: LBC850CLT1G, S-LBC850CLT1G
Material: Silicon
Certifications: AEC-Q101 qualified (S-prefix), RoHS compliant, Halogen Free
Moisture Sensitivity Level: 1
ESD Rating (Human Body Model): >4000 V
ESD Rating (Machine Model): >400 V

Technical Specifications

Parameter	Symbol	LBC850CLT1G	S-LBC850CLT1G	Unit	Min.	Typ.	Max.
MAXIMUM RATINGS (Ta = 25C)
CollectorEmitter Voltage	VCEO	45	45	V
CollectorBase Voltage	VCBO	50	50	V
EmitterBase Voltage	VEBO	6	6	V
Collector Current Continuous	IC	100	100	mA
THERMAL CHARACTERISTICS
Junction and Storage temperature	TJ,Tstg	-55	-55	~+150	~+150	C
ELECTRICAL CHARACTERISTICS (Ta= 25C)
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mA)	VBR(CEO)	45	45	V
CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0)	VBR(CES)	50	50	V
CollectorBase Breakdown Voltage (IC = 10 A)	VBR(CBO)	50	50	V
EmitterBase Breakdown Voltage (IE = 1.0 A)	VBR(EBO)	6	6	V
Collector Cutoff Current (VCB = 30 V)	ICBO			nA			15
Collector Cutoff Current (VCB = 30 V, TA = 150C)	ICBO			A			5
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 5.0 V)	HFE	420	520				800
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	VCE(sat)			V		0.25
CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)	VCE(sat)			V		0.6
BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	VBE(sat)			V		0.7
BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)	VBE(sat)			V		0.9
BaseEmitter Voltage (IC = 2.0 mA, VCE = 5.0 V)	VBE(on)			V		0.58	0.66
BaseEmitter Voltage (IC = 10 mA, VCE = 5.0 V)	VBE(on)			V		0.70	0.77
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz)	fT	100	100	MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)	Cobo			pF			4.5
Noise Figure (IC = 0.2 mA,VCE = 5.0 V, RS = 2.0 k f = 1.0 kHz, BW = 200 Hz)	NF			dB			4.0