General Purpose NPN Transistor LRC L9013QLT1G Designed for Automotive and Electronic Control Systems

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Product Description

Product Overview

The L9013QLT1G and S-L9013QLT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS, Halogen Free
Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)

Technical Specifications

Parameter	Symbol	L9013QLT1G	S-L9013QLT1G	Unit	Notes
Maximum Ratings	VCEO	20	20	V
	VCBO	40	40	V
	VEBO	5	5	V
	IC	500	500	mA
	PD	300	300	mW	Ta = 25C
Thermal Characteristics	Total Device Dissipation (FR-5 Board)			556	mW	@ TA = 25C
	Derate above 25C (FR-5 Board)			1.8	mW/
	Thermal Resistance, Junction-to-Ambient (FR-5 Board)	RJA			417	/W
	Total Device Dissipation (Alumina Substrate)			225	mW	@ TA = 25C
	Derate above 25C (Alumina Substrate)			0.9	mW/
Junction and Storage Temperature	TJ,Tstg	-55+150	-55+150
Electrical Characteristics (Ta= 25C)	Collector-Emitter Breakdown Voltage	V(BR)CEO	20	20	Vdc	(IC =1.0mA)
	Collector-Base Breakdown voltage	V(BR)CBO	40	40	Vdc	(IC = 100A)
	Emitter-Base Breakdown Voltage	V(BR)EBO	5	5	Vdc	(IE = 100A)
	Collector Cutoff Current	ICBO	-	-	nA	(VCB = 35 V)
	Emitter Cutoff Current	IEBO	-	-	nA	(VEB = 4V)
	DC Current Gain	HFE	150-300	150-300		(IC =50mA, VCE =1V)
	Collector-Emitter Saturation Voltage	VCE(S)	-	-	Vdc	(IC =500mA,IB =50mA)