Dual NPN transistors LRC S-LBC817-25DMT1G engineered for operation in various electronic applications

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Product Description

Product Overview

Dual General Purpose Transistors designed for various electronic applications. These NPN transistors offer reliable performance with key electrical characteristics for both ON and OFF states, as well as small-signal parameters.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix)
Compliance: RoHS

Technical Specifications

Characteristic	Symbol	LBC817-16	LBC817-25	LBC817-40	Unit	Conditions
MAXIMUM RATINGS
CollectorEmitter Voltage	V CEO	45	45	45	V
CollectorBase Voltage	V CBO	50	50	50	V
EmitterBase Voltage	V EBO	5.0	5.0	5.0	V
Collector Current Continuous	I C	500	500	500	mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation (FR5 Board)	P D	370 @ 25C (Derate 3.0 mW/C above 25C)			mW
Thermal Resistance, Junction to Ambient (FR5 Board)	R JA	333			C/W
Total Device Dissipation (Alumina Substrate)	P D	600 @ 25C (Derate 4.8 mW/C above 25C)			mW
Thermal Resistance, Junction to Ambient (Alumina Substrate)	R JA	208			C/W
Junction and Storage Temperature	T J , T stg	55 to +150			C
ELECTRICAL CHARACTERISTICS
CollectorEmitter Breakdown Voltage	V (BR)CEO	45			V	(IC = 10 mA)
CollectorEmitter Breakdown Voltage	V (BR)CES	50			V	(VEB = 0, IC = 10 A)
EmitterBase Breakdown Voltage	V (BR)EBO	5.0			V	(IE = 1.0 A)
Collector Cutoff Current	I CBO	100			nA	(VCB = 20 V)
Collector Cutoff Current	I CBO	5.0			A	(VCB = 20 V, TA = 150C)
ON CHARACTERISTICS
DC Current Gain	h FE	100 250	160 400	250 600		(IC = 100 mA, V CE = 1.0 V)
CollectorEmitter Saturation Voltage	V CE(sat)	0.7			V	(IC = 500 mA, IB = 50 mA)
BaseEmitter On Voltage	V BE(on)	1.2			V	( IC = 500 mA, V CE = 1.0 V)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product	f T	100			MHz	( IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance	C obo	10			pF	(V CB = 10 V, f = 1.0 MHz)