1200V 40A Trench Field Stop IGBT luxin-semi AU40N120T3A2 suitable for frequency converters motor drives
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Product Description
Product Overview
The AU40N120T3A2 is a 1200V, 40A Trench Field Stop IGBT designed for high reliability and ruggedness. It features Trench-Stop Technology for very tight parameter distribution, stable temperature behavior, and easy parallel switching due to a positive temperature coefficient in VCE(SAT). This IGBT is suitable for applications requiring enhanced avalanche capability, such as frequency converters and motor drives.
Product Attributes
- Brand: LU-Semi
- Product Code: AU40N120T3A2
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| 1200 | V | |||
| 1300 | V | VGE=0V , IC=250A | ||
| DC collector current | IC | 80 | A | TC = 25C |
| 40 | A | TC = 100C | ||
| Diode Forward current | IF | 40 | A | TC = 25C |
| 20 | A | TC = 100C | ||
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Turn off safe operating area | -160 | A | VCE 1200V, Tj 150C | |
| Pulsed Collector Current | ICM | 160 | A | VGE =15V, tp limited by Tjmax |
| Diode Pulsed Current | IFpuls | 80 | A | tp limited by Tjmax |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE= 15V, VCE 600V |
| Power dissipation | Ptot | 416 | W | Tj=25C |
| Operating junction temperature | Tj | -40...+150 | C | |
| Storage temperature | Ts | -55...+150 | C | |
| Soldering temperature | 260 | C | wave soldering 1.6mm from case for 10s | |
| IGBT thermal resistance, junction - case | R(j-c) | 0.3 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Gate threshold voltage | VGE(th) | 5.2 / 5.9 / 6.5 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation voltage | VCE(sat) | 1.75 | V | VGE=15V, IC=40A, Tj = 25C |
| 2.15 / 2.35 | V | VGE=15V, IC=40A, Tj = 150C | ||
| Zero gate voltage collector current | ICES | 250 | A | VCE = 1200V, VGE = 0V, Tj = 25C |
| 2500 | A | VCE = 1200V, VGE = 0V, Tj = 150C | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 15 | S | VCE=20V, IC=15A |
| Input capacitance | Cies | 6100 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 190 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Reverse transfer capacitance | Cres | 100 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Gate charge | QG | 260 | nC | VCC = 960V, IC = 40A, VGE = 15V |
| Short circuit collector current | ICSC | 250 | A | VGE=15V,tSC10us, VCC=600V, Tjstart=25C |
| Turn-on delay time | td(on) | 80 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C |
| Rise time | tr | 50 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-on energy | Eon | 4.8 | mJ | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-off delay time | td(off) | 180 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C |
| Fall time | tf | 80 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-off energy | Eoff | 1.65 | mJ | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C |
| Diode Forward Voltage | VFM | 2.5 | V | IF = 15A, Tj = 25C |
| Reverse Recovery Time | Trr | 250 | ns | IF= 15A, VR = 600V, di/dt= 700A/s, Tj = 25C |
| Reverse Recovery Current | Irr | 11 | A | IF= 15A, VR = 600V, di/dt= 700A/s, Tj = 25C |
| Reverse Recovery Charge | Qrr | 1 | C | IF= 15A, VR = 600V, di/dt= 700A/s, Tj = 25C |
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