NPN silicon transistor LRC LMUN2231LT1G featuring monolithic resistor networks and compact design for space saving circuits

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Product Description

Product Overview

The LMUN2231LT1G and S-LMUN2231LT1G are NPN silicon surface mount transistors featuring integrated monolithic bias resistor networks. These devices simplify circuit design, reduce board space, and decrease component count. They are suitable for automotive and other applications requiring unique site and control change requirements, with the S- prefix models being AEC-Q101 qualified and PPAP capable. The transistors are compliant with RoHS requirements and Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS requirements and Halogen Free
Qualification: AEC-Q101 qualified and PPAP capable (for S- prefix models)
Package Type: SOT23 (TO-236)
Transistor Type: NPN Silicon

Technical Specifications

Model	Device Marking	R1 (K)	R2 (K)	Shipping	Collector-Base Voltage (VCBO)	Collector-Emitter Voltage (VCEO)	Collector Current (IC) - Continuous	Total Device Dissipation (PD)	Thermal Resistance (RJA)	Junction & Storage Temperature (TJ, Tstg)	Input Voltage Range (Vin)
LMUN2231LT1G	A8H	2.2	2.2	3000/Tape&Reel	50 V	50 V	100 mA	1.5 W (@ TA = 25C on FR-5 Board)	67 C/W (on FR-5 Board)	-55 ~ +150 C	-10 ~ +12 V
S-LMUN2231LT1G	A8H	2.2	2.2	10000/Tape&Reel	50 V	50 V	100 mA	1.5 W (@ TA = 25C on FR-5 Board)	67 C/W (on FR-5 Board)	-55 ~ +150 C	-10 ~ +12 V
LMUN2231LT3G	A8H	2.2	2.2	10000/Tape&Reel	50 V	50 V	100 mA	1.5 W (@ TA = 25C on FR-5 Board)	67 C/W (on FR-5 Board)	-55 ~ +150 C	-10 ~ +12 V

Characteristic	Symbol	Min.	Typ.	Max.	Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)	VBR(CEO)	50	-	-	V
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)	VBR(CBO)	50	-	-	V
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)	ICBO	-	-	100	nA
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)	ICEO	-	-	500	nA
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)	IEBO	-	-	100	nA
ON CHARACTERISTICS (Note 2.)
DC Current Gain (IC = 5.0 mA, VCE = 10 V)	HFE	-	-	2.3	-
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA)	VCE(sat)	-	-	0.25	V
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL =1.0K)	VOL	-	-	0.2	V
Output Voltage (on) (VCC = 5.0 V, VB = 0.25 V, RL =1.0K)	VOH	-	-	0.8	V
Input Resistor	R1	-	2.2	-	K
Resistor Ratio	R1/R2	-	1.0	-	-

Dimension	Millimeters (Min)	Millimeters (Nom)	Millimeters (Max)	Inches (Min)	Inches (Nom)	Inches (Max)
A	0.89	1.0	1.11	0.035	0.039	0.044
A1	0.01	0.06	0.1	0.001	0.002	0.004
b	0.37	0.44	0.5	0.015	0.017	0.020
c	0.09	0.13	0.18	0.003	0.005	0.007
D	2.80	2.9	3.04	0.110	0.114	0.120
E	1.20	1.3	1.4	0.047	0.051	0.055
e	1.78	1.9	2.04	0.070	0.075	0.080
HE	2.10	2.4	2.64	0.083	0.094	0.104
L	0.10	0.2	0.3	0.004	0.008	0.012
L1	0.35	0.54	0.69	0.014	0.021	0.027