NPN Silicon Transistor LRC LMUN5213DW1T1G Featuring Monolithic Bias Resistor Network for Compact Circuit Designs

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The LMUN5213DW1T1G and S-LMUN5213DW1T1G are NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. These devices are designed to simplify circuit design, reduce board space, and decrease component count. They are RoHS compliant and Halogen Free. The 'S-' prefix variant is qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS requirements and Halogen Free.
Qualification (S- prefix): AEC-Q101 qualified and PPAP capable.
Package Type: SC88(SOT-363)
Device Marking: LMUN5213DW1T1G (7C), S-LMUN5213DW1T1G (7C)

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit
MAXIMUM RATINGS (Ta = 25C)
CollectorBase Voltage	VCBO	-	-	50	V
Collector Current Continuous	IC	-	-	100	mA
CollectorEmitter Voltage	VCEO	-	-	50	V
EmitterBase Breakdown Voltage	VEBO	-	-	6	V
THERMAL CHARACTERISTICS
Total Device Dissipation, (Note 1) @ TA = 25C	PD	-	-	250	mW
Derate above 25C		-	-	1.5	mW/C
Thermal Resistance, JunctiontoAmbient(Note 1)	RJA	-	493	-	C/W
Thermal Resistance, JunctiontoLead(Note 1)	RJL	-	188	-	C/W
Junction and Storage temperature	TJ,Tstg	-55	-	150	C
ELECTRICAL CHARACTERISTICS (Ta= 25C)
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mA, IB = 0)	VBR(CEO)	50	-	-	V
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0)	VBR(CBO)	50	-	-	V
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)	ICBO	-	-	100	nA
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)	ICEO	-	-	500	nA
Emitter-Base Breakdown Voltage (IE = 200 A, IC = 0)	VBR(EBO)	6	-	-	V
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 5.0 mA, VCE = 10 V)	HFE	80	-	140	-
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)	VCE(sat)	-	-	0.25	V
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL =1.0K)	VOL	-	-	0.2	V
Output Voltage (on) (VCC = 5.0 V, VB = 0.5 V, RL =1.0K)	VOH	-	-	0.8	V
Input Resistor	R1	32.9	47	61.1	K
Resistor Ratio	R1/R2	0.8	1	1.2	-

Model	R1(K)	R2(K)	Shipping
LMUN5213DW1T1G	47	47	3000/Tape&Reel
LMUN5213DW1T3G	47	47	10000/Tape&Reel
S-LMUN5213DW1T1G	47	47	3000/Tape&Reel

Dimension	Min (mm)	Nom (mm)	Max (mm)	Min (in)	Nom (in)	Max (in)
A	-	-	1.10	-	-	0.043
A1	0	-	0.10	0	-	0.004
b	0.15	0.20	0.25	0.006	0.008	0.01
c	0.08	0.15	0.22	0.003	0.006	0.009
D	1.80	2.00	2.20	0.07	0.078	0.086
E	2.00	2.10	2.20	0.078	0.082	0.086
E1	1.15	1.25	1.35	0.045	0.049	0.053
L	0.26	0.36	0.46	0.010	0.014	0.018
e	0.65	-	-	0.026	-	-
aaa	0.15	-	0.30	0.006	-	0.012
bbb	-	-	0.10	-	-	0.004
ccc	-	-	0.10	-	-	0.004
ddd	-	-	0.10	-	-	0.004