220 Package IGBT YGP20N65T2 650V 20A with Soft Current Turn Off Waveforms and Low Saturation Voltage

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Product Description

650V / 20A Trench Field Stop IGBT

The YGF20N65T2, YGK20N65T2, YGP20N65T2, and YGW20N65T2 are 650V / 20A Trench Field Stop IGBTs designed for high-reliability applications. They feature a maximum junction temperature of 175C, high breakdown voltage, short circuit rating, and very low saturation voltage (1.65V Typ. @ 20A). These IGBTs are suitable for soft switching applications, air conditioning, and motor drive inverters.

Product Attributes

Brand: LU-Semi
Origin: China (inferred from URL)
Product Series: YGF20N65T2, YGK20N65T2, YGP20N65T2, YGW20N65T2

Technical Specifications

Model	Package	VCE (V)	IC (A)	VCE(SAT) (V) @ IC=20A	Max Junction Temp (C)	Features
YGF20N65T2	TO-220F	650	20	1.65 (Typ.)	175	High breakdown voltage, Short Circuit Rated, Soft current turn-off waveforms
YGK20N65T2	TO-263	650	20	1.65 (Typ.)	175	High breakdown voltage, Short Circuit Rated, Soft current turn-off waveforms
YGP20N65T2	TO-220	650	20	1.65 (Typ.)	175	High breakdown voltage, Short Circuit Rated, Soft current turn-off waveforms
YGW20N65T2	TO247	650	20	1.65 (Typ.)	175	High breakdown voltage, Short Circuit Rated, Soft current turn-off waveforms

Maximum Ratings

Parameter	Symbol	Value	Unit	Notes
Collector-Emitter Breakdown Voltage	VCE	650	V
DC collector current	IC	40 (TC=25C), 20 (TC=100C)	A	limited by Tjmax
Diode Forward current	IF	40 (TC=25C), 20 (TC=100C)	A	limited by Tjmax
Continuous Gate-emitter voltage	VGE	20	V
Transient Gate-emitter voltage	VGE	30	V
Turn off safe operating area	-	- 60	A	VCE 650V, Tj 175C
Pulsed collector current	ICM	60	A	VGE=15V, tp limited by Tjmax
Short Circuit Withstand Time	Tsc	5	s	VGE= 15V, VCE 400V
Power dissipation	Ptot	30.6 (TO-220F), 125 (TO-220,TO-263), 142 (TO247)	W	Tj=25
Operating junction temperature	Tj	-40...+175	C
Storage temperature	Ts	-55...+175	C
Soldering temperature	-	260	C	wave soldering, 1.6mm from case for 10s
Mounting torque	M	0.6	Nm	M3 screw, Maximum of mounting processes

Electrical Characteristics

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Static Characteristics
Collector to Emitter Breakdown Voltage	BVCES	VGE = 0V, IC = 1mA	650	-	-	V
Collector to Emitter Saturation Voltage	VCE(SAT)	IC = 20A, VGE = 15V	-	1.65	2.05	V
G-E Threshold Voltage	VGE(th)	VGE = VCE, IC = 250A	4.4	5.4	6.4	V
Collector Cut-Off Current	ICES	VCE = 650V, VGE = 0V	-	-	40	A
G-E Leakage Current	IGES	VGE = 20V, VCE = 0V	-	-	200	nA
Transconductance	gfs	VCE=20V, IC=15A	-	10	-	S
Dynamic Characteristics (IGBT)
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	-	1050	-	pF
Output capacitance	Coes	-	-	50	-	pF
Reverse transfer capacitance	Cres	-	-	20	-	pF
Gate charge	QG	VCC = 520V, IC = 20A, VGE = 15V	-	45	-	nC
Short circuit collector current	ICSC	VGE=15V,tSC5us, VCC=400V, Tjstart=25C	-	150	-	A
Switching Characteristics (Inductive Load)
Turn-on Delay Time	td(on)	VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20, Tj=25C	-	20	-	ns
Rise Time	tr	-	-	40	-	ns
Turn-off Delay Time	td(off)	-	-	60	-	ns
Fall Time	tf	-	-	75	-	ns
Turn-on Energy	Eon	-	-	0.47	-	mJ
Turn-off Energy	Eoff	-	-	0.10	-	mJ
Electrical Characteristics (DIODE)
Diode Forward Voltage	VFM	IF = 20A	-	1.9	-	V
Reverse Recovery Time	Trr	IF= 15A, VR = 300V, di/dt =200A/s	-	50	-	ns
Reverse Recovery Current	Irr	-	-	4	-	A
Reverse Recovery Charge	Qrr	-	-	83	-	nC