Signal amplifier transistor LRC L2SC4083PWT1G high frequency device suitable for automotive qualified

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Product Description

Product Overview

High-Frequency Amplifier designed for various electronic applications. This device offers excellent performance characteristics, including high transition frequency and low noise factor, making it suitable for demanding signal amplification tasks.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Marking: L2SC4083PWT1G
Device Marking: 1D
Shipping: 3000/Tape&Reel, 10000/Tape&Reel
Compliance: RoHS requirements
Automotive Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)
Package Type: SC-70 / SOT-323

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-base breakdown voltage	BVCBO			20	V	IC = 10A
Collector-emitter breakdown voltage	BVCEO			11	V	IC = 1mA
Emitter-base breakdown voltage	BVEBO			3	V	IE = 10A
Collector cutoff current	ICBO			82	nA	VCB = 10V
Emitter cutoff current	IEBO			1.4	nA	VEB = 2V
DC current transfer ratio	hFE	3.2				VCE = 2V, IC = 10mA
Transition frequency	fT		180		MHz	VCE = 6V, IC = 2mA, f = 500MHz
Output capacitance	Cob		1.5		pF	VCB = 10V, IE = 0A, f = 1MHz
Collector-emitter saturation voltage	VCE(sat)		0.5		V	IC/IB = 10mA/5mA
Collector-base time constant	rbb'Cc		3.5		ns	VCB = 10V, IC = 10mA, f = 500MHz
Noise factor	NF		0.8		dB	VCB = 10V, IC = 10mA, f = 31.8MHz, Rg = 50

Absolute Maximum Ratings

Parameter	Symbol	Limits	Unit
Collector-base voltage	VCBO	20	V
Collector-emitter voltage	VCEO	11	V
Emitter-base voltage	VEBO	3	V
Collector current	IC	50	mA
Collector power dissipation	PC	0.15	W
Junction temperature	Tj	150	C
Storage temperature	Tstg	-55~+150	C