100V N Channel Power MOSFET luxin semi YSK038N010T1A designed for battery management and UPS systems
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Product Description
100V N-Channel Power MOSFET
This 100V N-Channel Power MOSFET series, including YSP040N010T1A, YSK038N010T1A, and YSF040N010T1A, offers extremely low on-resistance (RDS(on)) and excellent Qg x RDS(on) product (FOM). These devices are qualified according to JEDEC criteria and are 100% UIL Tested, making them ideal for applications such as motor control and drive, battery management, UPS (Uninterruptible Power Supplies), and DC/DC converters.
Product Attributes
- Brand: LU Semi
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Qualified according to JEDEC criteria, 100% UIL Tested
Technical Specifications
| Model | VDS (V) | ID (A) | RDS(on)@VGS=10V (m) | Package | Packaging |
| YSP040N010T1A | 100 | 120 | <4.2 | TO-220 | Tube |
| YSK038N010T1A | 100 | 120 | <4.2 | TO-263 | Tube |
| YSF040N010T1A | 100 | 120 | <4.2 | TO-220F | Tube |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Drain-Source Breakdown Voltage | VDS | 100 | V | |||
| DC collector current, limited by Tjmax | ID | TC = 25C | 120 | A | ||
| DC collector current, limited by Tjmax | ID | TC = 100C | 110 | A | ||
| Pulsed drain current, TC = 25C, tp limited by Tjmax | IDM | 480 | A | |||
| Avalanche energy, single pulse (L=0.5mH, Rg=25) | EAS | 306 | mJ | |||
| Gate source voltage | VGS | 20 | V | |||
| Power dissipation | Ptot | TC = 25C | 236 | W | ||
| Operating junction temperature | Tj ,Tstg | -55 | 150 | C | ||
| Thermal Resistance | ||||||
| Thermal resistance, junction - case | R(j-c) | 0.54 | C/W | |||
| Thermal resistance, junction ambient(minimal footprint) | R(j-a) | 70 | C/W | |||
| Electrical Characteristics | ||||||
| Drain to Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 100 | 108 | V | |
| G-S Threshold Voltage | VGS(th) | VGS = VCS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Zero gate voltage drain current | IDSS | VDS = 100V, VGS = 0V, Tj=25C | 0.05 | A | ||
| Zero gate voltage drain current | IDSS | VDS = 100V, VGS = 0V, Tj=125C | 10 | A | ||
| Zero gate voltage drain current | IDSS | VDS = 100V, VGS = 0V, Tj=125C | 100 | A | ||
| G-S Leakage Current | IGSS | VGS = 20V, VDS = 0V | 10 | nA | ||
| G-S Leakage Current | IGSS | VGS = 20V, VDS = 0V | 100 | nA | ||
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 50A | 3.4 | 4.2 | m | |
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 50A (TO-263) | 3.2 | 4.0 | m | |
| Transconductance | gfs | VDS=5V, ID=50A | 50 | S | ||
| Dynamic | ||||||
| Input capacitance | Ciss | VDS = 50V, VGS = 0V, f = 1MHz | 4700 | pF | ||
| Output capacitance | Coss | VDS = 50V, VGS = 0V, f = 1MHz | 1080 | pF | ||
| Reverse transfer capacitance | Crss | VDS = 50V, VGS = 0V, f = 1MHz | 31 | pF | ||
| Gate Total Charge | Qg | VGS=10V, VDS=50V, ID=20A, f=1MHz | 67 | nC | ||
| Gate-Source charge | Qgs | VGS=10V, VDS=50V, ID=20A, f=1MHz | 27 | nC | ||
| Gate-Drain charge | Qg d | VGS=10V, VDS=50V, ID=20A, f=1MHz | 11 | nC | ||
| Turn-on Delay Time | td(on) | VGS=10V, VDS=50V, RG=3.0 | 29 | ns | ||
| Rise Time | tr | VGS=10V, VDS=50V, RG=3.0 | 84 | ns | ||
| Turn-off Delay Time | td(off) | VGS=10V, VDS=50V, RG=3.0 | 46 | ns | ||
| Fall Time | tf | VGS=10V, VDS=50V, RG=3.0 | 93 | ns | ||
| Gate resistance | RG | VDS = 0V, VGS = 0V, f=1MHz | 1.8 | |||
| Body Diode Characteristics | ||||||
| Body Diode Forward Voltage | VSD | ISD = 50A, VGS=0V | 0.85 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 50A, dI/dt=100A/s | 67 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF = 50A, dI/dt=100A/s | 125 | nC | ||
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